SK Hynix HMCG84MEBRA174N

SK Hynix HMCG84MEBRA174N

Brand: SK Hynix | Category: Memory (RAM)

SKU: SK -HMCG84MEBRA174N | Part #: HMCG84MEBRA174N | MPN: HMCG84MEBRA174N

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About the SK Hynix HMCG84MEBRA174N

SK Hynix HMCG84MEBRA174N delivers DDR5 registered memory with CAS latency 46 and ultra-low 1.1V operating voltage—critical specifications for high-frequency trading platforms and in-memory database workloads requiring predictable latency and minimal power consumption. This 32GB RDIMM module operates at 5600 MT/s with 44.8 GB/s bandwidth, paired with dual-rank (2Rx8) architecture and on-die ECC for fault tolerance in mission-critical deployments.

Built on a 10-layer PCB with advanced RCD (Registering Clock Driver) buffering, the HMCG84MEBRA174N (part number HMCG84MEBRA174N) is engineered for Intel Xeon Scalable (Sapphire Rapids and newer) and AMD EPYC (Genoa and newer) server platforms. SK Hynix memory modules provide Chipkill and platform-controller ECC, ensuring data integrity across 0–85°C operating ranges typical in high-density data centers. Storage architects and IT procurement teams commonly specify this module for virtualization clusters, analytics platforms, and financial services infrastructure.

Enterprise Deployment Scenarios

  • High-frequency trading and algorithmic finance systems requiring sub-microsecond memory latency
  • In-memory databases (SAP HANA, Oracle Exadata) benefiting from low CAS timing and registered buffer stability
  • AI inference and machine learning workloads on 4th/5th-gen Xeon and EPYC platforms
  • Large-scale virtualization environments (VMware ESXi, KVM) with fault-tolerant ECC protection
  • Financial risk modeling and real-time data analytics requiring consistent performance under sustained load

The low-profile form factor integrates into standard server chassis without thermal or mechanical conflicts, while dual-rank configuration optimizes memory density and controller efficiency. For availability, specifications, and bulk pricing on the SK Hynix HMCG84MEBRA174N, submit your RFQ through Omnixon Global—your trusted B2B enterprise IT hardware partner in Dubai, UAE.

Technical Specifications

BrandSK Hynix
CategoryMemory (RAM)
SKUSK -HMCG84MEBRA174N
Part NumberHMCG84MEBRA174N
ConditionNew
Capacity32GB
Form FactorRDIMM
Speed5600Mbps
Manufacturer Part NumberHMCG84MEBRA174N
Memory TypeDDR5
Module Form FactorRDIMM (Registered DIMM)
Capacity32GB
Data Transfer Rate5600 MT/s
Module Bandwidth44800 MB/s
Pin Configuration288-pin
Operating Voltage1.1V
ECC SupportECC (with on-die ECC and registered buffer)
On-Die ECC (ODECC)Yes
Error CorrectionChipkill / Advanced ECC via platform controller
Ranks2Rx8 (Dual Rank)
CAS Latency (CL)46
Module HeightLow Profile (RDIMM standard)
Operating Temperature0°C to 85°C
GenerationDDR5
Compatible PlatformsIntel Xeon Scalable (Sapphire Rapids and later); AMD EPYC (Genoa and later)
Buffer TypeRCD (Registering Clock Driver) — RDIMM
PCB Layers10-layer

Frequently Asked Questions about SK Hynix HMCG84MEBRA174N

What does the SK Hynix HMCG84MEBRA174N do?

The SK Hynix HMCG84MEBRA174N is enterprise RDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. SK Hynix validates this module against major server vendor compatibility matrices.

What are the headline specs of the SK Hynix HMCG84MEBRA174N?

Key specifications for the SK Hynix HMCG84MEBRA174N: capacity 32GB; form factor RDIMM; new condition; memory type DDR5; memory capacity 32GB; memory speed 5600 MT/s; memory voltage 1.1V; memory form factor RDIMM. Manufacturer part number HMCG84MEBRA174N. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the SK Hynix HMCG84MEBRA174N compatible with my infrastructure?

The SK Hynix HMCG84MEBRA174N fits RDIMM memory slots and is compatible with major server platforms validated by SK Hynix. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.