Brand: SK Hynix | Category: Memory (RAM)
SKU: H5CGG8NGMDX-ES | Part #: H5CGG8NGMDX-ES | MPN: H5CGG8NGMDX-ES
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The SK Hynix HBM4 Base Die Engineering Sample (H5CGG8NGMDX-ES) represents SK Hynix's next-generation High Bandwidth Memory architecture, engineered to meet the extreme memory bandwidth and capacity demands of advanced AI training clusters, exascale HPC systems, and next-generation GPU and accelerator platforms. As an Engineering Sample, this component is targeted at system architects, SoC designers, and platform integrators performing early-stage validation, interoperability testing, and performance characterization ahead of production deployment. The HBM4 generation introduces a wider 2048-bit interface per stack compared to the 1024-bit interface of HBM3, enabling a substantial leap in peak aggregate bandwidth that is critical for large language model (LLM) inference and training workloads where memory bandwidth is the primary system bottleneck.
Built on SK Hynix's advanced DRAM process technology, the HBM4 Base Die serves as the logical and physical foundation of the complete HBM4 stack, housing the interface logic, through-silicon via (TSV) interconnects, and the base I/O circuitry that communicates with the host logic die via a silicon interposer or 2.5D/3D packaging substrate. The base die architecture in HBM4 adopts an open-base-die specification, enabling third-party logic or compute die integration, a design philosophy intended to support heterogeneous integration use cases such as logic-on-memory or custom AI accelerator configurations. This flexibility makes the H5CGG8NGMDX-ES particularly relevant for semiconductor companies and hyperscale platform teams designing bespoke accelerators.
As an Engineering Sample designation (ES suffix), the H5CGG8NGMDX-ES is not a production-released component and is supplied exclusively for technical evaluation, pre-silicon bring-up, and platform validation purposes. Enterprises and research institutions engaged in next-generation AI infrastructure development, memory subsystem benchmarking, or advanced packaging research will find this component essential for establishing readiness ahead of production-grade HBM4 availability. Omnixon Global facilitates access to this engineering sample for qualified buyers across UAE, GCC, EMEA, and APAC regions, supporting global technology programs that require early access to leading-edge memory technology.
| Manufacturer | SK Hynix |
| Manufacturer Part Number | H5CGG8NGMDX-ES |
| Product Line | HBM4 (High Bandwidth Memory 4) |
| Component Type | Base Die (Engineering Sample) |
| Memory Standard | HBM4 |
| Interface Width | 2048-bit per stack |
| Through-Silicon Via (TSV) | Yes — base die incorporates TSV interconnect layer for vertical stack integration |
| Open Base Die Support | Yes — HBM4 base die supports open-base-die specification for third-party logic die integration |
| Packaging Compatibility | 2.5D silicon interposer; advanced 3D heterogeneous integration substrates |
| Supply Voltage | To be confirmed per final HBM4 JEDEC specification; ES samples operated per SK Hynix validation guidelines |
| JEDEC Compliance | HBM4 JEDEC standard (in definition/validation phase at ES stage) |
| Sample Classification | Engineering Sample (ES) — not for production deployment |
| Target Integration | AI accelerators, HPC GPUs, custom logic-on-memory chiplet platforms |
| Form Factor | Bare die — requires interposer or advanced packaging substrate for system integration |
| Manufacturer Origin | Republic of Korea |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | SK Hynix |
| Category | Memory (RAM) |
| SKU | H5CGG8NGMDX-ES |
| Part Number | H5CGG8NGMDX-ES |
| Condition | New |
| Manufacturer Part Number | H5CGG8NGMDX-ES |
| Product Line | HBM4 (High Bandwidth Memory 4) |
| Component Type | Base Die (Engineering Sample) |
| Memory Standard | HBM4 |
| Interface Width | 2048-bit per stack |
| Through-Silicon Via (TSV) | Yes — base die incorporates TSV interconnect layer for vertical stack integration |
| Open Base Die Support | Yes — HBM4 base die supports open-base-die specification for third-party logic die integration |
| Packaging Compatibility | 2.5D silicon interposer; advanced 3D heterogeneous integration substrates |
| Supply Voltage | To be confirmed per final HBM4 JEDEC specification; ES samples operated per SK Hynix validation guidelines |
| JEDEC Compliance | HBM4 JEDEC standard (in definition/validation phase at ES stage) |
| Sample Classification | Engineering Sample (ES) — not for production deployment |
| Target Integration | AI accelerators, HPC GPUs, custom logic-on-memory chiplet platforms |
| Form Factor | Bare die — requires interposer or advanced packaging substrate for system integration |
| Manufacturer Origin | Republic of Korea |
Part number H5CGG8NGMDX-ES is qualified for SK Hynix servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.
Full manufacturer support (typically 3 years, RDIMM/LRDIMM SKUs often lifetime against manufacturing defects). All product is sourced through distribution so support registers cleanly under your company name.
Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.