SK Hynix H5CG48MEBDX014N 16Gb DDR4 Memory IC

Brand: SK Hynix | Category: Accessories & Components

SKU: SKHYNIXH5CG48MEBDX014N16GBDDR4DRAM | Part #: H5CG48MEBDX014N | MPN: H5CG48MEBDX014N

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SK Hynix manufactures the H5CG48MEBDX014N as a 16Gb DDR4 memory integrated circuit designed for high-density module assembly in server, storage, and AI infrastructure applications. This is a bare die component—not a finished DIMM—intended for board-level integration by memory module manufacturers, system integrators, and OEM partners building custom memory solutions for data centres across the GCC, South Asia, and Europe. The H5CG48MEBDX014N uses a 78-ball Fine-pitch Ball Grid Array package, which means direct soldering onto a PCB during module production; there is no slot installation or tool-less approach at the component level. For procurement teams and memory design engineers sourcing chips for high-volume module builds or bespoke memory configurations, this package form factor determines yield rates, assembly complexity, and rework procedures—factors that ripple through supply chain planning and manufacturing cost.

The architecture of the H5CG48MEBDX014N reflects SK Hynix's mature DDR4 platform. Internally, the device organizes 16 gigabits of capacity into a 4Gb × 4 configuration, meaning each chip delivers a 4-bit data bus and operates across 16 banks arranged as 4 bank groups of 4 banks each. This multi-bank structure is standard for modern DRAM and reduces row-to-row access latency in workloads that benefit from concurrent operations across different memory regions—a characteristic valued in data-centre compute and AI training scenarios where memory bandwidth utilization directly impacts throughput. SK Hynix designed this chip to conform to JEDEC JESD79-4, the official DDR4 SDRAM specification, ensuring compatibility with certified memory controllers and validated platform integrations. Supply voltage sits at 1.2 volts for both the core logic (VDD) and the data/address I/O (VDDQ), a low-power envelope that contributes to system-level thermal efficiency and power budgeting in dense server racks.

The H5CG48MEBDX014N includes several advanced DRAM features that appeal to infrastructure architects building resilient or high-performance memory subsystems. On-Die Termination support allows the chip to manage signal integrity at the die level, reducing the need for external termination components and lowering PCB complexity during module assembly. Write CRC (Cyclic Redundancy Check) and Command/Address Parity enable error detection at the memory interface, helping catch corruption during write operations or command transmission—valuable in mission-critical systems where data integrity is non-negotiable. Per-DRAM Addressability and Gear-Down Mode support offer flexibility for memory controllers to optimize frequency scaling and reduce electromagnetic interference in noise-sensitive environments. The device also supports partial self-refresh, a power-saving mode that preserves data in selected memory regions while reducing current draw during idle periods. These features are not exotic; they are mainstream in enterprise DDR4 solutions, but their presence on the H5CG48MEBDX014N confirms that SK Hynix targets the quality bar expected by tier-one OEMs and hyperscale operators.

Operating range for the H5CG48MEBDX014N spans 0°C to 85°C under standard commercial and industrial classification, appropriate for controlled data-centre and server cabinet environments. A memory module designer or AI infrastructure team procuring this chip would typically pair multiple H5CG48MEBDX014N devices on a single module substrate to build 32Gb, 64Gb, or higher-capacity DIMMs; the die revision 014N indicates this is a production-qualified version with proven silicon stability. When evaluating long-lead components for 2024–2025 memory module projects, supply chain managers often encounter allocation constraints on high-density DDR4 ICs as the industry transitions toward DDR5. SK Hynix maintains steady output of mature DDR4 products like the H5CG48MEBDX014N, making them accessible for both new builds targeting legacy platforms and for volume refresh cycles in existing data centres that continue to leverage proven DDR4 infrastructure.

Omnixon Global maintains inventory and supply arrangements for SK Hynix memory components across our UAE and GCC distribution network, serving system integrators, memory module manufacturers, and enterprise procurement teams throughout the region and into Asia-Pacific and European logistics hubs. Whether you require the H5CG48MEBDX014N for a near-term module assembly project, qualification testing, or strategic stock building, our technical team can facilitate component selection, lead-time confirmation, and volume negotiation. Contact our sales department to request a quotation or discuss availability for your specific shipment and integration timeline.

Memory IC Specifications & Functional Capabilities

• 16Gb density in 4Gb × 4 configuration with x4 data bus width; 16-bank architecture supporting concurrent row activation across 4 bank groups
• DDR4 SDRAM interface compliant with JEDEC JESD79-4; 1.2V supply voltage (VDD and VDDQ) for low-power operation and thermal efficiency
• 78-ball Fine-pitch Ball Grid Array package enabling direct PCB integration during module manufacturing; requires reflow soldering and controlled assembly processes
• On-Die Termination, Write CRC, Command/Address Parity, Per-DRAM Addressability, and Gear-Down Mode support for signal integrity, error detection, and flexible frequency management
• Partial Self-Refresh and Partial Array Self-Refresh capable for selective data preservation and standby power reduction in power-managed systems
• Commercial/industrial operating temperature range 0°C to 85°C; die revision 014N represents production-qualified silicon with proven field stability