Samsung K4A4G165WF-BCTD000 4Gb DDR4 Memory IC

Brand: Samsung | Category: Accessories & Components

SKU: SAMSUNGK4A4G165WFBCTD0004GBDDR4DRAM | Part #: K4A4G165WF-BCTD000 | MPN: K4A4G165WF-BCTD000

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The Samsung K4A4G165WF-BCTD000 is a 4Gb DDR4 memory integrated circuit designed for direct use in server, desktop, and workstation module assembly. Unlike consumer-grade memory chips, this component operates at an industrial voltage specification of 1.2V and is rated across a 0°C to 85°C temperature envelope, making it suitable for data centre environments where thermal consistency and long-term reliability matter. When properly deployed in multi-channel configurations, DDR4 memory at the 2400 MT/s data rate this part provides forms the backbone of system responsiveness — the difference between a server that sustains predictable latency under load and one that exhibits memory bottlenecks during peak operation. Every millisecond of delay in memory access propagates upward through application performance, which is why Samsung memory components are specified by infrastructure teams building systems where throughput cannot degrade under sustained demand.

This particular Samsung part uses a Fine-pitch Ball Grid Array (FBGA) package, a surface-mount configuration that allows manufacturers and module integrators to achieve high density in a compact footprint. The 288-pin design carries the data, address, and control signals required for DDR4 communication; the FBGA substrate physically connects these pins to the silicon die beneath. For data centre procurement specialists and memory module manufacturers, the K4A4G165WF-BCTD000 represents a midrange capacity point — 4Gb per chip — that achieves efficiency when stacked into 8Gb, 16Gb, or 32Gb RDIMM and UDIMM modules. The CAS latency rating of CL17 is typical for DDR4-2400 class memory; it reflects the clock cycles required between a read command and the appearance of data on the output pins, and this latency figure directly influences how quickly the CPU can retrieve stored values during instruction execution.

Samsung's position in enterprise memory manufacturing means that this component carries the company's established qualification history across server platforms from major OEMs — Dell, HPE, Lenovo, and others have validated Samsung DDR4 chips in their reference designs. Storage architects and infrastructure teams value this pedigree because it reduces qualification risk when sourcing replacement modules or building custom configurations outside standard SKU offerings. The K4A4G165WF-BCTD000 is manufactured to specifications that ensure predictable behaviour across production batches; Samsung maintains tight process control on voltage regulation, timing margins, and error-correcting code (ECC) compatibility. When this chip is soldered into a module assembly alongside complimentary signalling components, the resulting module can support either registered (with SPD and thermal sensors) or unbuffered configurations, depending on the substrate design employed by the module builder.

Deployment of this memory component occurs primarily in two contexts within the GCC and Asian data centre landscape. First, it appears in high-volume server refresh cycles where organisations are migrating from DDR3 to DDR4-based platforms; the industrial-grade temperature rating ensures the part will remain within specification even in warm operating environments common in Middle Eastern facilities. Second, system integrators building bespoke workstations for AI model training, computational fluid dynamics, or financial modelling leverage Samsung DDR4 chips to construct memory configurations tailored to application working-set sizes. The 1.2V operating voltage is lower than DDR3 standards, reducing power dissipation per module and contributing to overall system efficiency — a consideration that network engineers and capacity planners factor into power-budget calculations for rack deployments. The part number K4A4G165WF-BCTD000 appears on bill-of-materials documents whenever a Samsung memory solution is specified; cross-referencing this part number in your procurement system confirms you are receiving the authentic Samsung component and not a third-party substitute.

For organisations procuring the Samsung K4A4G165WF-BCTD000 in volume or as individual chips for module assembly, Omnixon Global serves as the authorised distributor across the UAE, wider GCC region, and into Asia. We maintain stock of Samsung memory components and partner directly with system integrators, OEMs, and data centre operators who require reliable supply with technical support. Contact our team with your specifications and quantity requirements; we can facilitate RFQ processes for both spot purchases and planned capacity orders.

Memory Specifications & Operating Parameters

• Memory technology: DDR4, 4 gigabit capacity per chip, 2400 MT/s data rate, CAS latency CL17
• Electrical rating: 1.2V operating voltage with industrial-grade temperature range 0°C to 85°C
• Package and pin configuration: Fine-pitch Ball Grid Array (FBGA), 288-pin count, approximately 20mm × 16mm footprint
• Module compatibility: Suitable for RDIMM, UDIMM, and SODIMM substrate designs; supports ECC and non-ECC configurations
• Qualification: Samsung-validated for Dell, HPE, Lenovo, and other major server and workstation platforms
• Supply chain confidence: Original part number K4A4G165WF-BCTD000 ensures authentic Samsung sourcing and full warranty support