Brand: SK Hynix | Category: Accessories & Components
SKU: SKHYNIXH25G9TCXXCX702A512GBNANDFLAS | Part #: H25G9TCXXCX702A | MPN: H25G9TCXXCX702A
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Accessories in production require fast replacement paths—and the SK Hynix H25G9TCXXCX702A 512Gb NAND Flash die delivers the raw storage capacity needed for rapid SSD and embedded storage module assembly. This raw NAND Flash component is engineered for enterprise-grade applications where storage architects and OEM assembly teams need proven, high-density memory dies to build custom storage solutions. The SK Hynix H25G9TCXXCX702A features TLC (Triple-Level Cell) architecture with a 128-layer stacked 4D (Periphery Under Cell) design, delivering 512Gb capacity (64GB per die) in a form factor optimized for integration into larger storage subsystems.
The die operates across a commercial temperature range of 0°C to +70°C and communicates via the ONFI (Open NAND Flash Interface) standard with an 8-bit bus width. Power requirements are straightforward: 3.3 V for supply voltage (Vcc) and 1.8 V for I/O voltage (Vccq). Page size is specified at 16KB data plus spare area, with block size at 768KB data plus spare area. Available in both TSOP and KGD (Known Good Die) package configurations depending on assembly variant, this component integrates seamlessly into enterprise SSD controllers, embedded storage modules, and industrial storage applications where design flexibility and proven reliability matter.
For bulk availability, technical integration support, or RFQ on the SK Hynix part number H25G9TCXXCX702A, contact Omnixon Global's enterprise components team.
| Brand | SK Hynix |
| Category | Accessories & Components |
| SKU | SKHYNIXH25G9TCXXCX702A512GBNANDFLAS |
| Part Number | H25G9TCXXCX702A |
| Condition | New |
| Capacity | 512Gb |
| Form Factor | BGA (Ball Grid Array) |
| Interface | UFS 3.1 |
| Speed | up to 2100 MB/s |
| Manufacturer Part Number | H25G9TCXXCX702A |
| Product Type | Raw NAND Flash Die |
| NAND Cell Type | TLC (Triple-Level Cell) |
| NAND Architecture | 4D (Periphery Under Cell) 128-Layer Stacked NAND |
| Die Capacity | 512Gb (64GB per die) |
| Interface Standard | ONFI (Open NAND Flash Interface) |
| Bus Width | 8-bit (x8) |
| Package Type | TSOP / KGD (Known Good Die) — configuration per assembly variant |
| Supply Voltage (Vcc) | 3.3 V |
| I/O Voltage (Vccq) | 1.8 V |
| Page Size | 16KB (data) + spare area |
| Block Size | 768KB (data) + spare area (typical for 128L TLC generation) |
| Operating Temperature | 0°C to +70°C (commercial range) |
| Application | Enterprise SSD, Embedded Storage, Industrial Storage Module Integration |
The SK Hynix H25G9TCXXCX702A 512Gb NAND Flash is enterprise IT hardware deployed in production data centers, server rooms, and edge sites across the GCC and EMEA region.
Key specifications for the SK Hynix H25G9TCXXCX702A 512Gb NAND Flash: capacity 512Gb; new condition; product name SK Hynix H25G9TCXXCX702A 512Gb NAND Flash; brand SK Hynix; category Accessories & Components; capacity 512Gb; memory type 3D NAND Flash; form factor BGA (Ball Grid Array). Manufacturer part number H25G9TCXXCX702A. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.