Samsung Universal Flash Storage 4.0 (UFS 4.0) 1TB embedded

Samsung Universal Flash Storage 4.0 (UFS 4.0) 1TB embedded

Brand: Samsung | Category: Memory (RAM)

SKU: KLUBG4G1CE-B0B1 | Part #: KLUBG4G1CE-B0B1 | MPN: KLUBG4G1CE-B0B1

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About the Samsung Universal Flash Storage 4.0 (UFS 4.0) 1TB embedded

The Samsung Universal Flash Storage 4.0 (UFS 4.0) 1TB embedded (KLUBG4G1CE-B0B1) represents Samsung's most advanced embedded NAND flash storage solution, built on the JEDEC UFS 4.0 standard and engineered for next-generation mobile, edge compute, and embedded system platforms. Fabricated using Samsung's 7th-generation V-NAND technology with a refined cell architecture, this 1TB device delivers sequential read speeds of up to 4,200 MB/s and sequential write speeds of up to 2,800 MB/s over a dual-lane HS-G5 (23.2 Gbps per lane) M-PHY interface — approximately doubling the bandwidth ceiling established by UFS 3.1. The embedded BGA form factor and low-power design make it suitable for thermally constrained deployments where performance density per milliwatt is a critical system constraint.

At the protocol level, UFS 4.0 employs the UniPro 2.0 transport layer and SCSI-based UFS command set, enabling command queue depths of up to 64 commands per logical unit and supporting multiple logical units for workload isolation. The device is fully backward compatible with UFS 3.1 and UFS 2.x host controllers, ensuring design continuity across platform generations. Advanced power management states — including sleep, link-off, and gear-switching — allow the controller to dynamically balance active throughput with idle power draw, a key attribute for always-on edge AI inference nodes and ruggedized embedded systems.

The KLUBG4G1CE-B0B1 is positioned for enterprise-adjacent and industrial embedded applications including on-device AI inference accelerators, autonomous systems, high-resolution imaging platforms, and ruggedized mobile computing. Its 1TB raw capacity, combined with Samsung's proven V-NAND endurance characteristics and built-in error correction through Samsung's proprietary ECC engine, delivers the sustained I/O consistency and data integrity required for mission-critical embedded deployments across UAE, GCC, EMEA, and APAC markets.

Ideal for

  • On-device AI inference and neural processing in edge compute modules requiring high sequential read bandwidth for model loading and feature extraction
  • Autonomous vehicle and ADAS perception systems where rapid, sustained access to high-resolution sensor data and map tiles is essential
  • Enterprise ruggedized mobile terminals and handheld scanners demanding 1TB of reliable embedded storage in compact, shock-tolerant BGA packaging
  • High-resolution industrial imaging and machine vision platforms that require fast write throughput for continuous frame capture and local buffering
  • 5G network edge appliances and small-cell embedded controllers where storage performance directly impacts real-time data processing latency
  • Medical imaging embedded systems requiring high-capacity, reliable flash storage with low-power operation for portable diagnostic equipment

Technical specifications

ManufacturerSamsung
Manufacturer Part NumberKLUBG4G1CE-B0B1
Product LineSamsung Universal Flash Storage 4.0 (UFS 4.0)
Capacity1TB
Interface StandardJEDEC UFS 4.0
Host Interface Physical LayerM-PHY HS-G5, Dual Lane
Maximum Sequential Read Speed4,200 MB/s
Maximum Sequential Write Speed2,800 MB/s
Transport LayerUniPro 2.0
Command Queue Depth64 commands per logical unit
NAND Flash TypeSamsung 7th-Generation V-NAND (TLC)
Form FactorEmbedded BGA (eMCP-compatible footprint)
Backward CompatibilityUFS 3.1, UFS 2.x
Power States SupportedActive, Sleep, Link-off, Gear-switching
Error CorrectionSamsung proprietary advanced ECC engine
Operating Temperature0°C to 75°C
Storage Temperature-40°C to 85°C
RoHS ComplianceRoHS compliant
Product CategoryEmbedded NAND Flash Storage

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUKLUBG4G1CE-B0B1
Part NumberKLUBG4G1CE-B0B1
ConditionNew
Manufacturer Part NumberKLUBG4G1CE-B0B1
Product LineSamsung Universal Flash Storage 4.0 (UFS 4.0)
Capacity1TB
Interface StandardJEDEC UFS 4.0
Host Interface Physical LayerM-PHY HS-G5, Dual Lane
Maximum Sequential Read Speed4,200 MB/s
Maximum Sequential Write Speed2,800 MB/s
Transport LayerUniPro 2.0
Command Queue Depth64 commands per logical unit
NAND Flash TypeSamsung 7th-Generation V-NAND (TLC)
Form FactorEmbedded BGA (eMCP-compatible footprint)
Backward CompatibilityUFS 3.1, UFS 2.x
Power States SupportedActive, Sleep, Link-off, Gear-switching
Error CorrectionSamsung proprietary advanced ECC engine
Operating Temperature0°C to 75°C
Storage Temperature-40°C to 85°C
RoHS ComplianceRoHS compliant
Product CategoryEmbedded NAND Flash Storage

Frequently Asked Questions about Samsung Universal Flash Storage 4.0 (UFS 4.0) 1TB embedded

Is the Samsung Universal Flash Storage 4.0 (UFS 4.0) 1TB embedded compatible with my server?

Part number KLUBG4G1CE-B0B1 is qualified for Samsung servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.

What support applies to this memory module?

Full manufacturer support (typically 3 years, RDIMM/LRDIMM SKUs often lifetime against manufacturing defects). All product is sourced through distribution so support registers cleanly under your company name.

How do I request a quote?

Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.