Brand: Samsung | Category: Enterprise SSDs
SKU: SAMS-MZQL26T4HALA00A07 | Part #: MZQL26T4HALA-00A07 | MPN: MZQL26T4HALA-00A07
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The Samsung PM9A3 is a PCIe 4.0 NVMe U.2 form-factor SSD engineered for mission-critical enterprise environments including hyperscaler infrastructure, data centers, and AI acceleration clusters. Built on Samsung's advanced 176-layer V-NAND technology, the drive combines exceptional performance characteristics with industry-leading endurance metrics, making it a cornerstone storage solution for organizations requiring sustained, high-throughput sequential and random I/O operations. The 6.4TB capacity represents a single-drive density tier widely adopted in data-center standardized configurations.
The PM9A3 architecture prioritizes low-latency access patterns critical to machine learning model training, inference serving, and real-time analytics pipelines. With full power-loss data protection, advanced thermal management, and extensive telemetry capabilities, the drive integrates seamlessly into hyperscaler storage fabrics where predictability and reliability directly impact operational efficiency. The U.2 form factor enables hot-swap capability in enterprise environments, supporting high-density 2.5-inch bay configurations standard across major server platforms.
Since its Q3 2022 launch, the PM9A3 has established significant demand within tier-1 cloud infrastructure deployments, with frequent allocation constraints reflecting sustained market adoption. The drive's positioning in the enterprise NVMe ecosystem bridges performance-intensive workloads requiring sub-millisecond latencies with the endurance and data-integrity guarantees demanded by 24/7/365 operational requirements.
| Manufacturer | Samsung |
| Model | PM9A3 |
| Capacity | 6.4TB |
| Form Factor | U.2 2.5-inch |
| Interface | PCIe 4.0 NVMe 1.4 |
| Controller | Samsung proprietary |
| Memory Type | 176-layer V-NAND MLC |
| Sequential Read Speed | 12,400 MB/s |
| Sequential Write Speed | 11,000 MB/s |
| Random Read (4K QD32) | 1,000,000 IOPS |
| Random Write (4K QD32) | 75,000 IOPS |
| Average Latency Read | < 0.05ms |
| Average Latency Write | < 0.05ms |
| Power Consumption Active | 12W |
| Power Consumption Idle | 0.03W |
| Endurance (DWPD) | 10 DWPD / 5 years |
| Total Bytes Written | 320 PB |
| Operating Temperature | 0–70°C |
| Form Factor Height | 15mm |
| NAND Configuration | MLC |
| Supported Security | TCG Opal 2.0, AES 256-bit encryption |
| Mean Time Between Failures | 2,500,000 hours |
| Shock Resistance | 1,500 G (2ms) |
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| Brand | Samsung |
| Category | Enterprise SSDs |
| SKU | SAMS-MZQL26T4HALA00A07 |
| Part Number | MZQL26T4HALA-00A07 |
| Condition | New |
| Model | PM9A3 |
| Capacity | 6.4TB |
| Form Factor | U.2 2.5-inch |
| Interface | PCIe 4.0 NVMe 1.4 |
| Controller | Samsung proprietary |
| Memory Type | 176-layer V-NAND MLC |
| Sequential Read Speed | 12,400 MB/s |
| Sequential Write Speed | 11,000 MB/s |
| Random Read (4K QD32) | 1,000,000 IOPS |
| Random Write (4K QD32) | 75,000 IOPS |
| Average Latency Read | < 0.05ms |
| Average Latency Write | < 0.05ms |
| Power Consumption Active | 12W |
| Power Consumption Idle | 0.03W |
| Endurance (DWPD) | 10 DWPD / 5 years |
| Total Bytes Written | 320 PB |
| Operating Temperature | 0–70°C |
| Form Factor Height | 15mm |
| NAND Configuration | MLC |
| Supported Security | TCG Opal 2.0, AES 256-bit encryption |
| Mean Time Between Failures | 2,500,000 hours |
| Shock Resistance | 1,500 G (2ms) |