Samsung PM9A3 6.4TB NVMe U.2 Enterprise SSD

Samsung PM9A3 6.4TB NVMe U.2 Enterprise SSD

Brand: Samsung | Category: Enterprise SSDs

SKU: SAMS-MZQL26T4HALA00A07 | Part #: MZQL26T4HALA-00A07 | MPN: MZQL26T4HALA-00A07

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About the Samsung PM9A3 6.4TB NVMe U.2 Enterprise SSD

The Samsung PM9A3 is a PCIe 4.0 NVMe U.2 form-factor SSD engineered for mission-critical enterprise environments including hyperscaler infrastructure, data centers, and AI acceleration clusters. Built on Samsung's advanced 176-layer V-NAND technology, the drive combines exceptional performance characteristics with industry-leading endurance metrics, making it a cornerstone storage solution for organizations requiring sustained, high-throughput sequential and random I/O operations. The 6.4TB capacity represents a single-drive density tier widely adopted in data-center standardized configurations.

The PM9A3 architecture prioritizes low-latency access patterns critical to machine learning model training, inference serving, and real-time analytics pipelines. With full power-loss data protection, advanced thermal management, and extensive telemetry capabilities, the drive integrates seamlessly into hyperscaler storage fabrics where predictability and reliability directly impact operational efficiency. The U.2 form factor enables hot-swap capability in enterprise environments, supporting high-density 2.5-inch bay configurations standard across major server platforms.

Since its Q3 2022 launch, the PM9A3 has established significant demand within tier-1 cloud infrastructure deployments, with frequent allocation constraints reflecting sustained market adoption. The drive's positioning in the enterprise NVMe ecosystem bridges performance-intensive workloads requiring sub-millisecond latencies with the endurance and data-integrity guarantees demanded by 24/7/365 operational requirements.

Ideal for

  • High-performance NVMe storage tier in hyperscaler cloud data centers supporting elastic compute and containerized workloads
  • AI model training and inference acceleration with rapid checkpoint/restore cycles and high concurrent I/O throughput
  • Real-time analytics and in-memory database caching layers requiring consistent ultra-low latency response times
  • High-frequency trading and financial services infrastructure where microsecond-level storage latency impacts competitive positioning
  • Video transcoding and media processing pipelines with sustained sequential bandwidth requirements and large working datasets
  • Enterprise Kubernetes persistent volume backends and distributed storage clusters requiring proven enterprise reliability

Technical specifications

ManufacturerSamsung
ModelPM9A3
Capacity6.4TB
Form FactorU.2 2.5-inch
InterfacePCIe 4.0 NVMe 1.4
ControllerSamsung proprietary
Memory Type176-layer V-NAND MLC
Sequential Read Speed12,400 MB/s
Sequential Write Speed11,000 MB/s
Random Read (4K QD32)1,000,000 IOPS
Random Write (4K QD32)75,000 IOPS
Average Latency Read< 0.05ms
Average Latency Write< 0.05ms
Power Consumption Active12W
Power Consumption Idle0.03W
Endurance (DWPD)10 DWPD / 5 years
Total Bytes Written320 PB
Operating Temperature0–70°C
Form Factor Height15mm
NAND ConfigurationMLC
Supported SecurityTCG Opal 2.0, AES 256-bit encryption
Mean Time Between Failures2,500,000 hours
Shock Resistance1,500 G (2ms)

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSamsung
CategoryEnterprise SSDs
SKUSAMS-MZQL26T4HALA00A07
Part NumberMZQL26T4HALA-00A07
ConditionNew
ModelPM9A3
Capacity6.4TB
Form FactorU.2 2.5-inch
InterfacePCIe 4.0 NVMe 1.4
ControllerSamsung proprietary
Memory Type176-layer V-NAND MLC
Sequential Read Speed12,400 MB/s
Sequential Write Speed11,000 MB/s
Random Read (4K QD32)1,000,000 IOPS
Random Write (4K QD32)75,000 IOPS
Average Latency Read< 0.05ms
Average Latency Write< 0.05ms
Power Consumption Active12W
Power Consumption Idle0.03W
Endurance (DWPD)10 DWPD / 5 years
Total Bytes Written320 PB
Operating Temperature0–70°C
Form Factor Height15mm
NAND ConfigurationMLC
Supported SecurityTCG Opal 2.0, AES 256-bit encryption
Mean Time Between Failures2,500,000 hours
Shock Resistance1,500 G (2ms)