Samsung HBM3E 36GB 12-Hi Stack
Brand: Samsung | Category: Memory (RAM)
SKU: S-K4U8E3S4AA-MGCL | Part #: K4U8E3S4AA-MGCL | MPN: K4U8E3S4AA-MGCL
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About the Samsung HBM3E 36GB 12-Hi Stack
The Samsung HBM3E 36GB 12-Hi Stack (part number K4U8E3S4AA-MGCL) is a high-bandwidth memory module engineered for next-generation AI accelerators, GPU compute clusters, and HPC workloads where peak memory bandwidth is critical. This Samsung component delivers exceptional data throughput through a 1024-bit interface architecture, making it the ideal choice for AI infrastructure teams and memory system architects designing ultra-high-performance platforms that demand bandwidth-intensive operations.
Built on Samsung's HBM3E standard with Through-Silicon Via (TSV) die interconnect technology, the module integrates 12 stacked die layers with on-die ECC support for data integrity in mission-critical environments. The 1.1 V VDDQ supply and 0°C to 70°C operating junction temperature range ensure reliable performance across demanding thermal profiles. Its Micro-bump packaging interface is designed for seamless 2.5D silicon interposer integration, enabling direct socket compatibility with leading accelerator and SoC designs. Peak bandwidth reaches up to 1.23 TB/s per stack, supported by 16 memory bus channels operating at up to 9.6 Gbps per pin—delivering the throughput required for real-time AI model training and inference acceleration. IT procurement teams evaluating memory solutions for next-generation data center deployments will find this Samsung HBM3E stack a proven foundation for competitive performance at scale.
Key Specifications
- Memory Type: HBM3E (High Bandwidth Memory 3 Extended)
- Capacity per Stack: 36 GB
- Stack Configuration: 12-Hi (12-layer die stack)
- Peak Bandwidth per Stack: Up to 1.23 TB/s
- Data Rate: HBM3E — up to 9.6 Gbps per pin
- ECC Support: Yes — on-die ECC
- Supply Voltage (VDDQ): 1.1 V
For detailed specifications, compatibility verification, and volume pricing on the Samsung HBM3E 36GB 12-Hi Stack (K4U8E3S4AA-MGCL), please submit an RFQ through Omnixon Global.
Technical Specifications
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | S-K4U8E3S4AA-MGCL |
| Part Number | K4U8E3S4AA-MGCL |
| Condition | New |
| Capacity | 36GB |
| Manufacturer Part Number | K4U8E3S4AA-MGCL |
| Memory Type | HBM3E (High Bandwidth Memory 3 Extended) |
| Capacity per Stack | 36 GB |
| Stack Configuration | 12-Hi (12-layer die stack) |
| Interface Width | 1024-bit per stack |
| Memory Bus Channels | 16 channels per stack (64-bit per channel) |
| Data Rate | HBM3E — up to 9.6 Gbps per pin |
| Peak Bandwidth per Stack | Up to 1.23 TB/s |
| Supply Voltage (VDDQ) | 1.1 V |
| Die Interconnect Technology | Through-Silicon Via (TSV) |
| Packaging Interface | Micro-bump, designed for 2.5D silicon interposer integration |
| ECC Support | Yes — on-die ECC |
| Operating Temperature | 0°C to 70°C (junction) |
| Form Factor | HBM stack (bare die / interposer-mount) |
| Generation | HBM3E |
| Standard Compliance | JEDEC HBM3E specification |
Frequently Asked Questions about Samsung HBM3E 36GB 12-Hi Stack
What does the Samsung HBM3E 36GB 12-Hi Stack do?
The Samsung HBM3E 36GB 12-Hi Stack is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
What are the headline specs of the Samsung HBM3E 36GB 12-Hi Stack?
Key specifications for the Samsung HBM3E 36GB 12-Hi Stack: capacity 36GB; 3 years support; new condition; performance 2 TB/s bandwidth per stack for next-gen GPU and AI accelerator integration in enterprise AI infrastructure; support 3 years standard (manufacturer). Manufacturer part number K4U8E3S4AA-MGCL. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.