Samsung DDR5 RDIMM 128GB 5600MHz ECC Registered

Samsung DDR5 RDIMM 128GB 5600MHz ECC Registered

Brand: Samsung | Category: Memory (RAM)

SKU: SAMS-M321RHGA0CB0CQK | Part #: M321RHGA0CB0-CQK | MPN: M321RHGA0CB0-CQK

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About the Samsung DDR5 RDIMM 128GB 5600MHz ECC Registered

The Samsung DDR5 RDIMM 128GB 5600MHz ECC Registered (M321RHGA0CB0-CQK) is a high-density, server-grade memory module built on Samsung's advanced DDR5 architecture. Operating at 5600 MT/s with a 288-pin registered DIMM form factor, it delivers substantially higher bandwidth and improved power efficiency compared to DDR4 predecessors. On-die ECC (ODECC) and the registered command/address buffer reduce electrical load on the memory controller, enabling large multi-DIMM configurations to maintain signal integrity at high speeds across modern dual-socket and quad-socket server platforms.

At 128GB per module, this RDIMM is engineered to support memory-bound enterprise workloads where capacity per slot is the primary constraint. The module uses a 3DS (Three-Dimensional Stacked) or high-density DRAM die configuration to achieve this capacity within a standard DIMM footprint, making it directly compatible with DDR5-capable server platforms from major brands. Operating voltage is 1.1V, consistent with the DDR5 specification, which reduces thermal output relative to equivalent-capacity DDR4 modules and simplifies thermal management in high-density rack deployments.

Target environments include in-memory database appliances, large language model (LLM) inference servers, high-performance computing (HPC) clusters, and real-time analytics platforms where aggregate memory capacity directly governs the size of the working dataset that can be held in RAM. When deployed across all available DIMM slots in a multi-socket server, configurations exceeding several terabytes of total system memory become achievable, enabling workloads that would otherwise require tiered or distributed memory architectures to run entirely within a single node's address space.

Ideal for

  • In-memory database acceleration (SAP HANA, Oracle In-Memory, VoltDB) where the entire active dataset must reside in system RAM to meet sub-millisecond query SLAs
  • Large language model inference serving, where multi-hundred-billion-parameter models require multi-terabyte node memory to avoid offloading activations or weights to slower storage tiers
  • High-performance computing and scientific simulation nodes requiring maximum per-socket memory capacity with the bandwidth headroom DDR5 provides over DDR4
  • Real-time streaming analytics and complex event processing platforms (Apache Flink, Hazelcast) that benefit from holding large stateful aggregations entirely in local memory
  • Virtualization hosts and private cloud hypervisor nodes where consolidating a high number of memory-intensive VMs demands both large aggregate capacity and ECC reliability
  • AI/ML training data preprocessing pipelines and feature stores where rapid random access to large structured datasets accelerates iteration cycles

Technical specifications

ManufacturerSamsung
Manufacturer Part NumberM321RHGA0CB0-CQK
Module TypeRDIMM (Registered DIMM)
Capacity128GB
DDR GenerationDDR5
Speed Grade5600 MT/s (DDR5-5600)
Form Factor288-pin DIMM
Error CorrectionECC (Error-Correcting Code) with On-Die ECC (ODECC)
RegisteredYes — registered command/address buffer (RCD)
Operating Voltage1.1V
CAS LatencyCL46
Module Rank2Rx4
Data Width64-bit (with ECC: 72-bit)
Operating Temperature0°C to 85°C
PCB LayersStandard enterprise server PCB
ComplianceJEDEC DDR5 standard; compatible with JEDEC SPD and PMIC specifications
RoHS ComplianceYes

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Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAMS-M321RHGA0CB0CQK
Part NumberM321RHGA0CB0-CQK
ConditionNew
Manufacturer Part NumberM321RHGA0CB0-CQK
Module TypeRDIMM (Registered DIMM)
Capacity128GB
DDR GenerationDDR5
Speed Grade5600 MT/s (DDR5-5600)
Form Factor288-pin DIMM
Error CorrectionECC (Error-Correcting Code) with On-Die ECC (ODECC)
RegisteredYes — registered command/address buffer (RCD)
Operating Voltage1.1V
CAS LatencyCL46
Module Rank2Rx4
Data Width64-bit (with ECC: 72-bit)
Operating Temperature0°C to 85°C
PCB LayersStandard enterprise server PCB
ComplianceJEDEC DDR5 standard; compatible with JEDEC SPD and PMIC specifications
RoHS ComplianceYes