Samsung 256GB DDR5 RDIMM 4800MHz 3DS ECC

Samsung 256GB DDR5 RDIMM 4800MHz 3DS ECC

Brand: Samsung | Category: Memory (RAM)

SKU: M334RGGA0E50-CWK | Part #: M334RGGA0E50-CWK | MPN: M334RGGA0E50-CWK

Contact for Pricing — Request a Quote

Request a Quote Contact Us

About the Samsung 256GB DDR5 RDIMM 4800MHz 3DS ECC

The Samsung 256GB DDR5 RDIMM 4800MHz 3DS ECC is a high-density registered DIMM engineered for next-generation enterprise servers requiring massive memory capacity in compact form factors. Built on 3DS (3-stacked Die) architecture, this module stacks DRAM dies vertically to deliver 256GB per slot while maintaining thermal efficiency and electrical stability in dense server configurations. The module operates at 4800MHz with full ECC protection, enabling reliable in-memory computing at scale.

Designed for 5th-generation Intel Xeon (Emerald Rapids) and AMD EPYC 9005-series processors, this RDIMM supports per-slot capacities that dramatically reduce the number of DIMM slots required, lowering overall system complexity and power consumption. The 3DS design reduces signal propagation delays and improves signal integrity compared to traditional high-density implementations.

Primary deployment targets include large-scale AI inference and training clusters, in-memory analytical databases (SAP HANA, Oracle Exadata), and specialized computing workloads where memory-to-compute ratios exceed conventional requirements. The module is optimized for fault-tolerant distributed systems and mission-critical applications.

Ideal for

  • Large-language model (LLM) inference acceleration with reduced per-node footprint
  • In-memory database engines (HANA, Exadata, Redis Cluster) requiring terabyte-scale memory per server
  • High-performance computing (HPC) and scientific simulation with memory-bound algorithms
  • Real-time analytics on petabyte-scale datasets using columnar databases
  • Enterprise AI model training pipelines with distributed gradient synchronization
  • Financial risk modeling and Monte Carlo simulations requiring extensive working memory

Technical specifications

ManufacturerSamsung
ManufacturerPartNumberM334RGGA0E50-CWK
Capacity256GB
TypeDDR5 RDIMM
Architecture3DS (3-stacked Die)
Speed4800MHz
CASLatency40
Voltage1.1V
ECCYes
RegisterYes
FormFactor288-pin DIMM
ModuleHeight32.0mm
DataBusWidth64-bit
DensityHigh-density 3DS configuration
ProcessorCompatibilityIntel Xeon 5th-Gen (Emerald Rapids), AMD EPYC 9005-series
OperatingTemperature0°C to 95°C
ThermalDesignPowerOptimized for passive operation in server airflow

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUM334RGGA0E50-CWK
Part NumberM334RGGA0E50-CWK
ConditionNew
ManufacturerPartNumberM334RGGA0E50-CWK
Capacity256GB
TypeDDR5 RDIMM
Architecture3DS (3-stacked Die)
Speed4800MHz
CASLatency40
Voltage1.1V
ECCYes
RegisterYes
FormFactor288-pin DIMM
ModuleHeight32.0mm
DataBusWidth64-bit
DensityHigh-density 3DS configuration
ProcessorCompatibilityIntel Xeon 5th-Gen (Emerald Rapids), AMD EPYC 9005-series
OperatingTemperature0°C to 95°C
ThermalDesignPowerOptimized for passive operation in server airflow