Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK

Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK

Brand: Samsung | Category: Memory (RAM)

SKU: M329R8GA0PB0-CQK | Part #: M329R8GA0PB0-CQK | MPN: M329R8GA0PB0-CQK

Contact for Pricing — Request a Quote

Request a Quote Contact Us

About the Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK

Samsung's 256GB DDR5 LRDIMM running at 4800 MT/s represents the high-capacity memory standard for modern data centre infrastructure. The M329R8GA0PB0-CQK is engineered for servers that demand both density and stability—environments where a single memory module must carry genuine workload without compromise. At 256GB per DIMM, this Samsung part allows infrastructure teams to populate a single socket with nearly a quarter-terabyte of capacity, reducing the total module count required while maintaining the rigorous error correction and load distribution that enterprise deployments require.

The architecture of the M329R8GA0PB0-CQK reflects the maturity of DDR5 LRDIMM design. Load-Reduced DIMMs exist specifically to solve the electrical loading problem that plagues high-density memory configurations. When you populate eight or more memory modules in a single server, the combined electrical load on the memory controller can degrade signal integrity and stability. Samsung addresses this by incorporating a registered clock driver (RCD) and a dedicated data buffer on the module itself. This buffer absorbs the electrical load and reshapes the signal before it reaches the controller, allowing server designers to achieve higher module counts and greater capacity without sacrificing frequency or reliability. The Samsung DDR5 specification here runs at 4800 MT/s, matching the JEDEC standard for DDR5 LRDIMM—a speed that balances memory subsystem throughput with thermal and power efficiency.

From a configuration standpoint, the M329R8GA0PB0-CQK is built on an 8Rx4 rank architecture, meaning the module presents eight ranks of 4-bit width to the memory controller. This rank density is typical of ultra-high-capacity DIMMs and allows the module to deliver full bandwidth across all 256GB of addressable space. The module operates at 1.1V, the standard DDR5 LRDIMM operating voltage, which represents a substantial power reduction compared to prior DDR4 technology and contributes meaningfully to total system power consumption in environments running dozens or hundreds of servers. Both ECC (error-correcting code) and on-die ECC are present—the former protecting against multi-bit errors across the system interconnect, the latter protecting data within the DRAM die itself. For storage architects, AI infrastructure teams, and server hardware specialists tasked with configuring systems that will run mission-critical workloads for 3–5 years without unplanned downtime, this dual-layer error protection is a basic requirement, not an upgrade.

The 288-pin DIMM form factor is the physical standard for all modern server memory, but the distinction between registered and load-reduced matters substantially when you move beyond four-module configurations. A standard registered DIMM (RDIMM) will work in lower-density setups, but as you add capacity per socket, the memory bus becomes congested and signal quality deteriorates. The Samsung part M329R8GA0PB0-CQK was designed for systems where high density is the goal from the outset—dual-socket or quad-socket platforms where each processor needs access to 512GB, 1TB, or higher. Network infrastructure teams, database administrators, and those provisioning in-memory analytics platforms will find the 256GB capacity per module directly reduces procurement complexity and physical footprint. The part is rated for standard data centre operating conditions from 0°C to 85°C, allowing deployment in warm-aisle or cold-aisle configurations typical of modern facilities.

Samsung's reputation in enterprise memory stems from rigorous manufacturing consistency and long-term availability commitment. The M329R8GA0PB0-CQK carries the CQK die revision, indicating the specific silicon mask and production line used, which matters for long-term sourcing. When a data centre orders memory for a refresh cycle, the ability to source identical or drop-in compatible modules 18 months later—without redesign, BIOS updates, or validation cycles—directly affects operational continuity. Procurement teams and infrastructure planners rely on this consistency. The module complies fully with JEDEC DDR5 LRDIMM standards, meaning it will function within any server platform certified for DDR5 memory, whether from Dell, HPE, Lenovo, or Supermicro. This interoperability reduces vendor lock-in and simplifies multi-vendor environments common in large enterprises.

Technical Specifications & Performance Characteristics

  • Capacity and Speed: 256GB DDR5 LRDIMM at 4800 MT/s (PC5-38400), delivering sustained memory bandwidth essential for parallel processing and large dataset operations
  • Error Protection: Full ECC plus on-die ECC, protecting against transient and permanent failures across system interconnect and DRAM cells
  • Load-Reduced Architecture: Registered Clock Driver (RCD) and data buffer enable eight-module or higher configurations without signal degradation or frequency loss
  • Rank Configuration: 8Rx4 rank density supports full addressing across 256GB with balanced electrical load distribution and multiple independent command channels
  • Operating Voltage & Thermal: 1.1V standard DDR5 operating voltage with 0–85°C operating range, reducing power consumption and supporting varied data centre thermal environments
  • Form Factor & Compliance: 288-pin DIMM fully compliant with JEDEC DDR5 LRDIMM standard, ensuring broad platform compatibility across server manufacturers
  • Manufacturing Traceability: Samsung M329R8GA0PB0-CQK with CQK die revision provides long-term sourcing stability and consistent qualification across replacement cycles

Omnixon Global supplies Samsung memory modules and related enterprise hardware to data centres, AI research facilities, and large-scale IT operations across the UAE, GCC region, and into Asia and Europe. We hold working stock of the M329R8GA0PB0-CQK and can assist with configuration validation, quantity planning, and logistics coordination. For infrastructure refreshes, memory upgrades, or new deployments, please contact our technical sales team with your server specifications and capacity requirements to request a quotation.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUM329R8GA0PB0-CQK
Part NumberM329R8GA0PB0-CQK
ConditionNew
Capacity256GB
Form FactorLRDIMM
Speed4800 MT/s
Manufacturer Part NumberM329R8GA0PB0-CQK
Module TypeLRDIMM (Load-Reduced DIMM)
GenerationDDR5
Capacity256GB
Form Factor288-pin DIMM
Speed4800 MT/s
PC RatingPC5-38400
Voltage1.1V
ECCYes
RegisteredYes (with RCD and Data Buffer)
Rank8Rx4
Die RevisionCQK (DDR5-4800)
On-Die ECCYes
Operating Temperature0°C to 85°C (standard operating range)
Pins288-pin
ComplianceJEDEC DDR5 LRDIMM standard

Frequently Asked Questions about Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK

What does the Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK do?

The Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK?

Key specifications for the Samsung 256GB DDR5 LRDIMM M329R8GA0PB0-CQK: new condition; memory type DDR5; memory capacity 256GB; memory speed 4800 MT/s; memory voltage 1.1V; memory form factor LRDIMM. Manufacturer part number M329R8GA0PB0-CQK. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.