Samsung 256GB DDR5 LRDIMM

Brand: Samsung | Category: Memory (RAM)

SKU: M321R4GA3BB4-CWM | Part #: M321R4GA3BB4-CWM | MPN: M321R4GA3BB4-CWM

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Samsung's 256GB DDR5 LRDIMM, part number M321R4GA3BB4-CWM, is engineered for Intel Xeon Scalable processors (3rd generation and newer) and AMD EPYC systems where memory density and reliability cannot be compromised. This is not a desktop or consumer module—it is purpose-built for the memory channels of high-core-count server processors that demand both capacity and load reduction across multi-socket configurations. The LRDIMM architecture decouples the DRAM stack from the memory controller, allowing system designers to populate more modules per channel without degrading signal integrity or reducing frequency. For infrastructure teams building AI training clusters, high-frequency trading systems, or large-scale analytics platforms, this module represents a practical choice when you need 256GB of registered, error-corrected memory in a single DIMM slot.

At the hardware level, the M321R4GA3BB4-CWM combines Samsung's three-dimensional stacked (3DS) DRAM technology with a 10Rx4 rank configuration and an 8-high stack height. This density is achieved without sacrificing speed: the module operates at DDR5-4800, a frequency that aligns with JEDEC standards and the memory bus capabilities of current-generation Xeon and EPYC platforms. The 80-bit bus width includes 64 bits of data traffic and 16 bits of ECC protection, meaning every byte written to the module is automatically verified and correctable on retrieval. Samsung engineered this density using TSV (through-silicon via) technology, which vertically interconnects the DRAM dies and reduces the electrical path lengths compared to earlier generations. In practical terms, this allows data centre architects to specify fewer DIMM slots while achieving the same or greater total capacity, freeing up valuable real estate on the motherboard for other expansion or reducing the overall footprint of a single server.

The presence of both an RCD (registering clock driver) and a DB (data buffer) on the module is what makes this an LRDIMM rather than a simpler RDIMM. The RCD isolates the command and address lines from the DRAM core, reducing the electrical load on the memory controller. The DB, in turn, buffers all data flowing to and from the module, allowing the system to tolerate deeper stack depths and higher module counts per channel. For a storage architect or senior systems engineer evaluating this module, the practical benefit is straightforward: you can populate all available memory slots on a high-end server without watching bandwidth collapse or signal margins disappear. The 1.1V operating voltage is lower than DDR4, reducing power consumption and heat output—important considerations when cooling costs are a line item in your operating budget.

Omnixon Global sources Samsung DDR5 LRDIMMs directly from the manufacturer's approved distribution partners, ensuring authenticity and full warranty coverage across the GCC, broader Middle East, and into Asia. We maintain inventory of the M321R4GA3BB4-CWM for rapid deployment to data centres, hyperscale facilities, and enterprise IT operations teams throughout the region. Our technical team understands the compatibility matrix between these modules and current-generation Intel and AMD platforms, and we work closely with system integrators and procurement teams to validate configurations before installation. Whether you are upgrading an existing infrastructure or specifying a new deployment, we are equipped to support your memory procurement with the same rigour you apply to your architecture decisions.

Performance & Technical Specifications

• Capacity: 256GB per module; 10-rank configuration enables efficient population of multi-socket server systems
• Speed: DDR5-4800 MT/s with CAS latency of 40, aligned with Intel Xeon Scalable and AMD EPYC memory controller specifications
• ECC Protection: Full single-bit error correction and double-bit error detection across all 64 data bits
• Load Reduction Architecture: RCD + DB buffer design permits maximum density without frequency penalty or signal degradation
• Power Efficiency: 1.1V operating voltage reduces per-module power draw compared to DDR4 LRDIMM equivalents
• 3DS TSV Technology: Samsung's three-dimensional stacking reduces electrical path lengths and supports the 8-high stack height required for 256GB capacity
• Operating Range: 0°C to 85°C case temperature, suitable for standard data-centre thermal environments
• JEDEC Compliance: Fully compliant with DDR5 standard, ensuring interoperability across qualified Intel and AMD platforms