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Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD

Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M386AAG40AM3CTD | Part #: M386AAG40AM3-CTD | MPN: M386AAG40AM3-CTD

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About the Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD

Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD is a load-reduced DIMM engineered for high-density server deployments requiring robust error correction and memory scalability. This octal-rank (8Rx4) module delivers ECC protection across 288-pin DDR4 architecture, making it ideal for mission-critical enterprise infrastructure where data integrity is non-negotiable. Operating at 2666 MT/s (PC4-21300) with CAS latency 19, the module balances performance and thermal efficiency within a compact 31.25 mm profile, fully compliant with JEDEC DDR4 LRDIMM standards and RoHS regulations.

Storage architects and IT procurement teams select this Samsung memory module for hyperscale data centers, virtualization platforms, and distributed computing environments demanding maximum RAM capacity per socket. The load-reduced design minimizes electrical stress on server motherboards, enabling denser DIMM populations without sacrificing stability. With 1.2 V operating voltage and support for temperatures from 0°C to 85°C, the M386AAG40AM3-CTD integrates seamlessly into mission-critical deployments running SAP HANA, Oracle databases, and high-frequency analytics workloads. The 16 Gb die density combined with ECC and registered buffering ensures fault tolerance and extended system lifespan—critical for organizations where unplanned downtime carries substantial financial risk.

Omnixon Global stocks the Samsung M386AAG40AM3-CTD for rapid deployment across the GCC region and beyond. Whether you're upgrading legacy servers, building new data center infrastructure, or scaling AI/ML clusters, our enterprise procurement specialists can validate compatibility with your platform roadmap and expedite logistics. Request a quotation through Omnixon Global today to discuss bulk pricing, availability, and technical integration support for your next-generation memory architecture.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M386AAG40AM3CTD
Part NumberM386AAG40AM3-CTD
ConditionNew
Capacity128 GB
Form FactorLRDIMM
Speed2666 Mbps
Manufacturer Part NumberM386AAG40AM3-CTD
Capacity128 GB
Memory TypeDDR4
Module Form FactorLRDIMM (Load-Reduced DIMM)
Pin Count288-pin
Speed2666 MT/s (PC4-21300)
Voltage1.2 V
Error CorrectionECC (Error-Correcting Code)
RanksOctal Rank (8Rx4)
Data Width64-bit (72-bit with ECC)
Die Density16 Gb
CAS Latency19-19-19 (CL19 at 2666 MT/s)
Operating Temperature0°C to 85°C
Module Height31.25 mm (standard low-profile server DIMM)
RoHS ComplianceRoHS compliant
Buffer TypeData Buffer (DB) with Register (RCD)
JEDEC StandardJEDEC DDR4 LRDIMM

Frequently Asked Questions about Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD

What does the Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD do?

The Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD?

Key specifications for the Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD: capacity 128 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 128GB; memory speed 2666 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386AAG40AM3-CTD. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD compatible with my infrastructure?

The Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CTD fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.