Micron 232-Layer NAND 3D TLC B58R

The Micron 232-Layer NAND 3D TLC B58R (MT29F2T08EUBKF) represents Micron's most advanced NAND flash architecture deployed in enterprise-grade storage solutions. Built on Micron's proprietary 232-layer 3D NAND process node — the industry's highest layer count in mass production at its introduction — the B58R die delivers a significant areal density advantage over prior generations, enabling higher capacity per die and improved bits-per-cell efficiency with Triple-Level Cell (TLC) storage. The architecture incorporates Micron's charge trap floating gate innovations alongside advanced on-die ECC and data path optimizations that sustain both read and write performance under the sustained, mixed-workload conditions characteristic of enterprise deployments.

The MT29F2T08EUBKF is a raw NAND component targeting SSD controller and storage module manufacturers building enterprise SSDs, data center NVMe drives, UFS-based solutions, and high-density storage arrays. At the 2Tb (terabit) per die density point, this device allows system designers to achieve previously impractical storage capacities in constrained form factors. The B58R generation improves program throughput and read latency relative to Micron's 176-layer predecessor, while the 232-layer stack maintains competitive power efficiency per gigabit — a critical metric for hyperscale and AI infrastructure operators managing thermal and power budgets at rack scale.

Enterprise and data center environments benefit from the B58R's enhanced endurance characteristics and Micron's rigorous qualification standards applied to this component family. Storage subsystems built around the MT29F2T08EUBKF are well suited to AI training and inference storage tiers, high-throughput object storage, read-intensive analytics databases, and content delivery infrastructure. Omnixon Global supplies this component to enterprise IT, integrators, and storage system builders across the UAE, GCC, EMEA, and APAC regions.

Ideal for

• High-density enterprise NVMe SSD construction for data center read-intensive and mixed-workload storage tiers
• AI and machine learning infrastructure storage — feeding high-throughput training dataset pipelines requiring sustained sequential read bandwidth
• Hyperscale object storage nodes where maximum raw NAND density per U of rack space is a primary design constraint
• and ODM storage module manufacturing for cloud service provider custom SSD programs
• Edge computing and content delivery network appliances requiring compact, high-capacity flash storage with low idle power
• Enterprise all-flash array (AFA) back-end NAND refresh and capacity expansion programs

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.