Brand: Micron | Category: Memory (RAM)
SKU: MICR-MTC40F204WS1RC56BA | Part #: MTC40F204WS1RC56BA | MPN: MTC40F204WS1RC56BA
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The Micron 128GB DDR5-5600 LRDIMM represents the maximum-capacity configuration for dual-socket server architectures, engineered to support enterprise-scale AI training, high-performance computing, and data analytics workloads that demand extreme memory bandwidth and capacity. Built on advanced DDR5 technology, this load-reduced DIMM variant distributes electrical load across the memory bus, enabling higher-density configurations while maintaining signal integrity and thermal efficiency critical to hyperscale and HPC environments. The 2S2Rx4 configuration (2 ranks, 4 die per rank) optimizes the balance between capacity, performance, and reliability for servers requiring maximum addressable memory per socket pair.
Launched in Q4 2024, this SKU directly addresses the explosive demand from hyperscalers and HPC centers building next-generation AI infrastructure. The 128GB capacity per DIMM reduces overall slot count while delivering the 12TB-per-system configurations increasingly required for large-language model inference, scientific computing, and real-time analytics. DDR5-5600 operation provides 44.8 GB/s bandwidth per channel, exceeding predecessor DDR4 platforms while the LRDIMM topology eliminates the memory controller bottleneck that constrained prior-generation high-capacity deployments.
| Manufacturer | Micron |
| Capacity | 128GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | LRDIMM (Load-Reduced DIMM) |
| Speed | 5600 MHz (DDR5-5600) |
| Configuration | 2S2Rx4 |
| Rank Density | 2 ranks per DIMM |
| Die Configuration | 4 DRAM die per rank |
| ECC Support | Yes, single-bit error correction and multi-bit error detection |
| Voltage | 1.1V nominal operating voltage |
| Bandwidth per Channel | 44.8 GB/s |
| CAS Latency | 46 cycles (CL46) |
| Max System Memory (2-Socket) | 12TB (96 DIMM slots populated) |
| Temperature Operating Range | 0°C to 85°C |
| Thermal Design Power | Up to 12W per DIMM |
| RoHS Compliance | Yes, RoHS 3 compliant |
| Manufacturing Process | Advanced CMOS process node |
| Support | Compatible with 4th and 5th generation Intel Xeon Scalable and AMD EPYC 9004-series and later platforms |
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| Brand | Micron |
| Category | Memory (RAM) |
| SKU | MICR-MTC40F204WS1RC56BA |
| Part Number | MTC40F204WS1RC56BA |
| Condition | New |
| Capacity | 128GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | LRDIMM (Load-Reduced DIMM) |
| Speed | 5600 MHz (DDR5-5600) |
| Configuration | 2S2Rx4 |
| Rank Density | 2 ranks per DIMM |
| Die Configuration | 4 DRAM die per rank |
| ECC Support | Yes, single-bit error correction and multi-bit error detection |
| Voltage | 1.1V nominal operating voltage |
| Bandwidth per Channel | 44.8 GB/s |
| CAS Latency | 46 cycles (CL46) |
| Max System Memory (2-Socket) | 12TB (96 DIMM slots populated) |
| Temperature Operating Range | 0°C to 85°C |
| Thermal Design Power | Up to 12W per DIMM |
| RoHS Compliance | Yes, RoHS 3 compliant |
| Manufacturing Process | Advanced CMOS process node |
| Support | Compatible with 4th and 5th generation Intel Xeon Scalable and AMD EPYC 9004-series and later platforms |