HPE 256GB 8Rx4 PC5-4800B-L LRDIMM SmartMemory

The HPE 256GB 8Rx4 PC5-4800B-L LRDIMM SmartMemory (P43333-B21) is a high-capacity Load-Reduced DIMM engineered for HPE ProLiant Gen11 servers, delivering DDR5-4800 MHz performance across an eight-rank, quad-die-per-package architecture. Operating on the DDR5 standard at a base speed of 4800 MT/s, this module leverages an on-DIMM data buffer to reduce the electrical load on the memory controller, enabling platforms to populate higher DIMM counts per channel without sacrificing signal integrity or memory bandwidth.

As an HPE SmartMemory module, P43333-B21 incorporates an embedded Serial Presence Detect (SPD) EEPROM that stores HPE-validated firmware, allowing HPE ProLiant servers to authenticate the module at POST. This authentication unlocks full platform-level performance optimisation, Advanced Memory Protection features, and enhanced RAS (Reliability, Availability, and Serviceability) capabilities including ECC. The SmartMemory identification mechanism also enables proactive health monitoring through HPE iLO, surfacing memory health telemetry directly within the server management interface.

With a 256 GB single-module capacity, this LRDIMM is positioned for memory-intensive enterprise workloads where aggregate system memory must reach multiple terabytes per node. Data-heavy applications including in-memory databases, large-scale virtualisation environments, AI/ML model training, and high-performance analytics benefit directly from the combination of DDR5 bandwidth, deep buffering, and the high per-slot capacity this module provides. Its design aligns with HPE's validated memory population guidelines for Gen11 platforms, ensuring system-level stability under continuous production loads.

Ideal for

• Large-scale virtualisation hosts running dense VM populations on HPE ProLiant Gen11 two-socket servers, where maximising total addressable memory per node is critical to consolidation ratios
• In-memory database deployments such as SAP HANA or Redis Enterprise, where multi-terabyte memory configurations must sustain high-throughput transactional and analytical operations simultaneously
• AI and machine learning inference or training nodes that require large model footprints to reside entirely in DRAM, reducing latency from storage-tier memory tiering
• High-performance computing clusters and scientific simulation workloads demanding high aggregate memory bandwidth and large per-node memory capacity across tightly coupled parallel jobs
• Enterprise private cloud infrastructure platforms where workload density, live-migration headroom, and memory overcommit ratios depend on maximum per-server DRAM population
• Columnar analytics and data warehousing appliances processing large datasets entirely in-memory to deliver sub-second query response times across business intelligence platforms

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.