SK Hynix HBM3E 12-Hi 48GB AI Memory Stack

Brand: SK Hynix | Category: Memory (RAM)

SKU: H5CG48BGBDX018 | Part #: H5CG48BGBDX018 | MPN: H5CG48BGBDX018

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About the SK Hynix HBM3E 12-Hi 48GB AI Memory Stack

Operating at 1.2 V with advanced on-die error correction, the SK Hynix HBM3E 12-Hi 48GB AI Memory Stack delivers the low-latency, high-bandwidth performance essential for AI accelerators and next-generation datacenter GPUs. This bare-die memory stack (part number H5CG48BGBDX018) integrates through-silicon via interconnect technology within a 2.5D silicon interposer, enabling peak bandwidth exceeding 1.2 TB/s across a 1024-bit interface per stack. SK Hynix engineered this module on an advanced DRAM process node (1b nm-class) to meet JEDEC HBM3E specification, making it ideal for high-performance computing, machine learning inference, and memory-intensive workloads where throughput and reliability are non-negotiable.

The HBM3E architecture delivers data transfer rates up to 9.6 Gbps per pin, with capacity pooled at 48 GB per 12-layer die stack, making it suitable for AI infrastructure teams and GPU memory designers building next-generation accelerator systems. On-die ECC ensures data integrity across industrial and datacenter operating temperature ranges, while the 2.5D integration method minimizes footprint and power dissipation. Whether you are optimizing memory bandwidth for large language model inference or scaling HPC cluster performance, this SK Hynix stack provides the density and speed modern AI workloads demand. Contact Omnixon Global to request a detailed quote and technical documentation for the H5CG48BGBDX018.

Key Specifications

  • Manufacturer: SK Hynix
  • Memory Standard: HBM3E
  • Capacity per Stack: 48 GB
  • Stack Configuration: 12-Hi (12-layer die stack)
  • Interface Bus Width: 1024-bit per stack
  • Peak Bandwidth per Stack: >1.2 TB/s
  • Data Transfer Rate: Up to 9.6 Gbps per pin
  • Operating Voltage (VDD): 1.2 V
  • Error Correction: On-die ECC
  • Interconnect Technology: Through-Silicon Via (TSV)

Technical Specifications

BrandSK Hynix
CategoryMemory (RAM)
SKUH5CG48BGBDX018
Part NumberH5CG48BGBDX018
ConditionNew
Manufacturer Part NumberH5CG48BGBDX018
Memory StandardHBM3E
Stack Configuration12-Hi (12-layer die stack)
Capacity per Stack48 GB
Interface Bus Width1024-bit per stack
Peak Bandwidth per Stack>1.2 TB/s
Data Transfer RateUp to 9.6 Gbps per pin
Operating Voltage (VDD)1.2 V
Interconnect TechnologyThrough-Silicon Via (TSV)
Integration Method2.5D silicon interposer (CoWoS or equivalent)
Error CorrectionOn-die ECC (Error Correcting Code)
Memory TypeDRAM (LPDDR-based HBM cell)
Form FactorHBM stack die (bare die, not DIMM)
Target Host DevicesAI accelerators, datacenter GPUs, HPC processors
Process NodeAdvanced DRAM process (SK Hynix 1b nm-class)
Temperature GradeIndustrial/datacenter operating range
ComplianceJEDEC HBM3E specification

Frequently Asked Questions about SK Hynix HBM3E 12-Hi 48GB AI Memory Stack

What does the SK Hynix HBM3E 12-Hi 48GB AI Memory Stack do?

The SK Hynix HBM3E 12-Hi 48GB AI Memory Stack is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. SK Hynix validates this module against major server vendor compatibility matrices.