Samsung PM9A3 3840GB NVMe PCIe Gen4 2.5" 7mm Enterprise SSD MZQL2384HCLS-00A07
Brand: Samsung | Category: Enterprise SSDs
SKU: MZQL2384HCLS-00A07 | Part #: MZQL2384HCLS-00A07
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About the Samsung PM9A3 3840GB NVMe PCIe Gen4 2.5" 7mm Enterprise SSD MZQL2384HCLS-00A07
The Samsung PM9A3 3840GB NVMe PCIe Gen4 2.5" 7mm Enterprise SSD MZQL2384HCLS-00A07 from Samsung is enterprise-grade Enterprise SSDs hardware built for data centers. Samsung PM9A3 3.84TB NVMe PCIe Gen4 enterprise SSD delivers ultra-high IOPS and low latency for demanding data centre workloads. Engineered for read-intensive applications, AI/ML inference, OLAP databases, and cloud storage platforms requiring maximum throughput in a compact 2.5" U.2 form factor. Available in brand new condition. Samsung enterprise ssds products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
Technical Specifications
| Brand | Samsung |
| Category | Enterprise SSDs |
| SKU | MZQL2384HCLS-00A07 |
| Part Number | MZQL2384HCLS-00A07 |
| Condition | New |
| Product Series | PM9A3 |
| Drive Type | Enterprise NVMe SSD |
| Raw Capacity | 3840 GB (3.84 TB) |
| Interface | PCIe® Gen4 x4 NVMe |
| NVMe Protocol Version | NVMe 1.4 |
| Connector Type | U.2 SFF-8639 |
| PCIe Lanes | x4 |
| PCIe Generation | Gen4 (backwards compatible with Gen3) |
| Sequential Read Throughput | Up to 6,800 MB/s |
| Sequential Write Throughput | Up to 4,000 MB/s |
| Random Read IOPS (4KB) | Up to 1,000,000 IOPS |
| Random Write IOPS (4KB) | Up to 200,000 IOPS |
| Average Read Latency | ~120 µs |
| Average Write Latency | ~20 µs |
| Endurance (TBW) | ~2,100 TBW |
| DWPD (5-year) | 0.3 DWPD |
| MTBF | 2,000,000 hours |
| Data Path Protection | End-to-End T10 DIF |
| Power Loss Protection (PLP) | Yes — Capacitor-backed |
| Error Correction | LDPC (Low-Density Parity-Check) |
| Form Factor | 2.5-inch |
| Height | 7 mm |
| Dimensions (L x W x H) | 100.45 mm x 69.85 mm x 7.0 mm |
| Weight | Approx. 105 g |
| NAND Flash Type | Samsung V-NAND TLC (Triple-Level Cell) |
| NAND Architecture | Samsung 6th Generation V-NAND |
| DRAM Cache | Yes — onboard DRAM buffer |
| Controller | Samsung proprietary enterprise NVMe controller |
| Active Power (Read) | Up to 25 W |
| Active Power (Write) | Up to 14 W |
| Idle Power | ~5 W |
| Operating Voltage | 3.3 V / 12 V |
| Operating Temperature | 0°C to 70°C |
| Storage Temperature | -40°C to 85°C |
| Operating Humidity | 5% to 95% RH (non-condensing) |
| Shock Resistance (Operating) | 1,500 G / 0.5 ms |
| Vibration Resistance (Operating) | 5.36 G RMS (20–2000 Hz) |