Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3

Brand: Samsung | Category: Memory (RAM)

SKU: MDRRWM4QDBC2-3 | Part #: MDRRWM4QDBC2-3

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About the Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3

Product Overview

The Samsung 96GB DDR5-6400 ECC RDIMM represents the cutting edge of enterprise server memory technology, purpose-built for organisations that demand extreme memory capacity, exceptional bandwidth, and uncompromising data integrity. As AI inference, machine learning training, real-time analytics, and hyperscale virtualisation continue to push server memory requirements to new heights, this module delivers a compelling answer: 96GB of high-density DDR5 capacity operating at a blazing 6400 MT/s transfer rate, housed in a fully registered DIMM form factor with on-die ECC and end-to-end error correction.

Samsung, the world's leading manufacturer of DRAM and NAND flash memory, has engineered this module using advanced 1a-nm process node technology, enabling higher cell density, lower power consumption per bit, and tighter signal integrity compared to previous DDR4 generations. For enterprise IT architects, cloud infrastructure providers, HPC cluster designers, and data centre operators across the GCC and beyond, this module is a strategic investment in future-ready compute infrastructure.

Whether populating a dual-socket Intel Xeon Scalable (Sapphire Rapids or Granite Rapids) platform, an AMD EPYC Genoa or Bergamo system, or a next-generation ARM-based server, the Samsung DDR5-6400 RDIMM integrates seamlessly with JEDEC-standard DDR5 memory controllers, unlocking the full memory bandwidth potential of modern CPUs and accelerating every workload that is memory-bound.

Key Features & Benefits

  • 96GB High-Density Capacity: Maximise per-slot memory density to reduce the number of DIMMs required for large memory footprints, lowering system complexity, power draw, and cost-per-gigabyte at scale.
  • DDR5-6400 Speed Grade: Operating at 6400 MT/s, this module delivers approximately 51.2 GB/s of theoretical peak bandwidth per channel — more than double the bandwidth of DDR4-3200, directly accelerating AI model inference, data analytics pipelines, and high-throughput database transactions.
  • ECC (Error-Correcting Code) Protection: On-die ECC combined with registered DIMM architecture provides multi-layer fault tolerance, automatically detecting and correcting single-bit errors and detecting multi-bit errors, essential for mission-critical enterprise workloads where data corruption is unacceptable.
  • Registered (Buffered) DIMM Architecture: The register component buffers command and address signals between the memory controller and DRAM arrays, enabling systems to support higher DIMM counts per channel and larger overall memory capacities without signal integrity degradation.
  • Lower Power Per Bit: DDR5 operates at 1.1V versus DDR4's 1.2V, and Samsung's advanced process node further optimises power efficiency, reducing thermal output in high-density memory configurations and contributing to lower PUE metrics in the data centre.
  • Samsung Genuine OEM Quality: Manufactured and tested in Samsung's own fabrication facilities, this module carries Samsung's full component traceability and quality assurance — critical for organisations with strict procurement and compliance requirements.
  • JEDEC DDR5 Standard Compliance: Fully compliant with JEDEC JESD79-5 DDR5 specifications, ensuring broad platform compatibility and interoperability across certified server platforms from leading OEM vendors.
  • RAS (Reliability, Availability, Serviceability) Features: Includes post-package repair (PPR), data bus inversion (DBI), decision feedback equalisation (DFE), and write CRC — a comprehensive suite of enterprise RAS capabilities that minimise downtime and extend operational longevity.

Technical Architecture

The Samsung MDRRWM4QDBC2-3 is built on Samsung's 1a-nm class DRAM die technology, stacking multiple high-capacity DRAM die packages on a single 288-pin DDR5 RDIMM PCB. The DDR5 standard introduces a fundamental architectural shift from DDR4: each DDR5 DIMM now contains two independent 32-bit subchannels rather than a single 64-bit channel. This subchannel architecture improves memory access granularity, reduces latency for small-footprint operations, and allows the memory controller to issue independent commands to each subchannel simultaneously, significantly improving effective utilisation.

The on-module registering clock driver (RCD) — a key component of the RDIMM design — buffers all command, address, and control signals, shielding the memory controller from the electrical load of the DRAM devices. This allows system architects to populate more DIMMs per memory channel without violating signal integrity budgets, enabling larger total system memory configurations. The RCD in DDR5 RDIMMs also integrates additional intelligence compared to DDR4 predecessors, including temperature sensing and SPD hub functionality.

SPD (Serial Presence Detect) data is stored on an integrated SPD hub and communicates via the I3C bus interface introduced with DDR5, enabling faster and more reliable module identification, power management signalling, and thermal monitoring by the server's BMC (Baseboard Management Controller). This enhanced out-of-band manageability is particularly valuable in large-scale data centre environments managed through IPMI or Redfish-based infrastructure automation.

Performance & Capacity

At DDR5-6400 speed with a typical CAS latency of CL52, the Samsung 96GB RDIMM delivers peak theoretical bandwidth of approximately 51.2 GB/s per channel. In a dual-channel configuration — standard in a single-socket server — this yields over 102 GB/s of aggregate memory bandwidth. On a dual-socket platform with eight memory channels per socket, aggregate system memory bandwidth can exceed 800 GB/s, rivalling HBM-class bandwidth in certain configurations.

For AI and machine learning inference workloads using large language models (LLMs) or transformer-based architectures, memory bandwidth is frequently the primary bottleneck. Upgrading from DDR4-3200 to DDR5-6400 can reduce memory-bound inference latency by 30–50% in tested scenarios. For in-memory databases such as SAP HANA, Redis, or VoltDB, the combination of 96GB per DIMM capacity and DDR5 bandwidth enables larger active working sets to reside entirely in DRAM, eliminating storage I/O as a performance limiter. In virtualised environments, each VM can be allocated larger memory quotas, reducing memory balloon driver activity and improving VM density per host.

Compatibility & Integration

The Samsung DDR5-6400 96GB RDIMM is designed for compatibility with server platforms built on the Intel Xeon Scalable (4th and 5th generation, codenamed Sapphire Rapids and Granite Rapids) and AMD EPYC (4th generation Genoa, Genoa-X, Bergamo, and Siena) processors — all of which natively support DDR5 memory. It is compatible with leading server platforms from Dell PowerEdge (R-series), HPE ProLiant (DL/ML series), Lenovo ThinkSystem, Supermicro, Gigabyte, and other JEDEC DDR5-compliant server OEMs.

  • JEDEC JESD79-5 DDR5 compliant
  • 288-pin RDIMM form factor
  • Compatible with Intel Xeon Scalable Gen 4 & Gen 5 platforms
  • Compatible with AMD EPYC 9004 series (Genoa, Genoa-X, Bergamo, Siena)
  • Supported under major hypervisors: VMware vSphere, Microsoft Hyper-V, Red Hat KVM, Proxmox
  • Compatible with Linux (RHEL, Ubuntu, SLES) and Windows Server operating systems
  • Manageable via IPMI 2.0, Redfish, and vendor-specific BMC interfaces

Ideal Use Cases

  • Generative AI & LLM Inference: Large language models such as GPT-class or Llama-class architectures require massive memory capacity to load model weights. High-capacity DDR5 RDIMMs reduce the need for model sharding across multiple nodes, simplifying inference infrastructure.
  • Machine Learning Training Clusters: Training pipelines that process large mini-batches benefit from high memory bandwidth to feed GPU accelerators. DDR5-6400 RDIMMs help prevent CPU-side memory from becoming the training bottleneck in GPU-accelerated servers.
  • In-Memory Databases & OLAP Analytics: Platforms like SAP HANA, Oracle TimesTen, and Apache Ignite benefit directly from maximised DRAM capacity and bandwidth, enabling larger analytical datasets to be processed entirely in-memory at query speeds.
  • High-Density Server Virtualisation: VMware vSphere, Microsoft Hyper-V, and KVM environments hosting hundreds of VMs per host require large DRAM pools. 96GB DIMMs allow administrators to maximise VM density while maintaining per-VM memory SLAs.
  • High-Performance Computing (HPC): Computational fluid dynamics, molecular dynamics, financial risk modelling, and genomics workloads are inherently memory-intensive. DDR5-6400 bandwidth accelerates simulation throughput and reduces time-to-result.
  • Cloud-Native & Kubernetes Workloads: Container orchestration platforms benefit from large memory pools to support thousands of concurrent microservices pods without memory pressure-induced OOM events.
  • Real-Time Streaming & CEP: Complex event processing engines and real-time streaming platforms (Apache Kafka, Apache Flink) that operate on large in-memory state stores benefit from DDR5's improved bandwidth and latency profile.

Why Buy from Omnixon

Omnixon Global is a trusted B2B IT hardware distributor headquartered in Dubai, UAE, serving enterprise clients across the GCC region including Saudi Arabia, UAE, Qatar, Kuwait, Bahrain, Oman, and international markets worldwide. We maintain dedicated local inventory of enterprise memory modules, ensuring rapid fulfilment for time-sensitive infrastructure projects. Our team of certified IT hardware specialists provides expert pre-sales consultation to help you validate platform compatibility, configure optimal memory topologies, and source the right modules for your specific server environment. Omnixon's procurement processes are built around enterprise compliance standards, offering full product traceability, genuine OEM components, and a streamlined procurement experience tailored for corporate IT departments, system integrators, and public sector organisations. When you source Samsung enterprise memory through Omnixon, you benefit from a partner that understands GCC data centre requirements, local logistics, and the technical nuances of enterprise memory architecture.

Related Products & Ecosystem

To build a complete, high-performance server memory ecosystem, consider pairing this Samsung DDR5 RDIMM with complementary products available from Omnixon's extensive catalogue. Intel Xeon Scalable and AMD EPYC server processors (CPUs) are natural platform companions, as are enterprise NVMe SSDs for storage-layer acceleration and GPU accelerators for AI and HPC compute. For system integration, explore our range of enterprise servers from Dell, HPE, Lenovo, and Supermicro. Network adapters and high-speed transceivers ensure your memory-optimised servers connect to low-latency storage fabrics and high-bandwidth network switches. Omnixon also stocks complementary enterprise HDDs, KVM switches for out-of-band server management, UPS and power protection solutions to safeguard your infrastructure, and server rack enclosures to house your compute deployments — all available through a single trusted distributor relationship.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUMDRRWM4QDBC2-3
Part NumberMDRRWM4QDBC2-3
ConditionNew
Capacity96GB
Memory TypeDDR5
Speed6400 MT/s (DDR5-6400)
Form FactorRDIMM (Registered DIMM)
Pin Configuration288-pin
ECC SupportYes — On-Die ECC + End-to-End ECC
Voltage1.1V
Rank Configuration2Rx4
Compatible ProcessorsIntel Xeon Scalable Gen 4/5 (Sapphire Rapids, Granite Rapids); AMD EPYC 9004 Series (Genoa, Bergamo)
StandardJEDEC JESD79-5 DDR5

Frequently Asked Questions about Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3

What does the Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3 do?

The Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3 is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3?

Key specifications for the Samsung 96GB DDR5-6400 ECC RDIMM Server Memory Module MDRRWM4QDBC2-3: new condition; part number MDRRWM4QDBC2-3; condition Brand New; manufacturer Samsung; capacity 96GB; memory type DDR5; speed 6400 MT/s (DDR5-6400). Manufacturer part number MDRRWM4QDBC2-3. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.