Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK

Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK

Brand: Samsung | Category: Memory (RAM)

SKU: M321RBGA0B40-CWK | Part #: M321RBGA0B40-CWK

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About the Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK

Product Overview

The Samsung 256GB DDR5 ECC RDIMM (Registered Dual Inline Memory Module) represents the pinnacle of enterprise server memory technology, purpose-built for the most demanding computational environments in existence today. As organisations scale their AI inference clusters, virtualisation estates, and in-memory database platforms, the requirement for ultra-high-density, high-bandwidth memory has never been more critical. Samsung, the world's leading DRAM manufacturer, delivers this module as part of its enterprise DDR5 lineup, combining extraordinary capacity with the error-correcting and buffered signalling features that server infrastructure demands.

Operating under the DDR5 standard, this RDIMM introduces fundamental architectural improvements over its DDR4 predecessors — doubling the internal bank groups, introducing on-die ECC at the DRAM level, and delivering significantly higher per-pin bandwidth. The result is a memory module that not only stores more data but moves it faster and more reliably than any previous generation. For enterprises in the GCC and beyond that are deploying next-generation Intel Xeon Scalable (Sapphire Rapids and beyond) or AMD EPYC (Genoa and Bergamo) processor platforms, this module provides the memory backbone required to unlock full platform performance.

Sourced as New Pulled, this unit has been carefully removed from factory-configured systems or production-ready inventory, meaning it retains its original quality and reliability characteristics while representing exceptional value for enterprise procurement teams managing large-scale refresh or greenfield deployment budgets.

Key Features & Benefits

  • 256GB Ultra-High Density: Maximises memory capacity per DIMM slot, enabling servers with limited slot counts to achieve terabyte-scale memory configurations critical for in-memory databases and large AI model inference.
  • DDR5 Architecture: Delivers up to 4800 MT/s base transfer rates with higher-frequency profiles available, providing dramatically improved bandwidth over DDR4 at equivalent densities.
  • Registered (Buffered) Design: The RDIMM register chip offloads electrical load from the memory controller, enabling stable multi-DIMM-per-channel configurations essential in high-density server builds.
  • On-Die ECC (ODECC) + System-Level ECC: DDR5 introduces on-die error correction at the DRAM chip level in addition to the system-level ECC supported by the RDIMM architecture, providing a dual-layer protection model against soft errors and bit flips.
  • Samsung DRAM Excellence: Manufactured using Samsung's advanced node DRAM fabrication process, ensuring industry-leading yield quality, consistent electrical characteristics, and long operational lifespan.
  • Lower Voltage Operation: DDR5 operates at 1.1V compared to DDR4's 1.2V, contributing to measurable power savings across large memory populations in high-density blade and rack server deployments.
  • RAS Features: Full suite of Reliability, Availability, and Serviceability features including post-package repair, row-hammer mitigation, and improved refresh management for continuous uptime in production environments.
  • New Pulled Condition: Retains full original quality and performance characteristics, offering enterprise-grade reliability at a compelling total cost of ownership for budget-conscious procurement cycles.

Technical Architecture

DDR5 RDIMM architecture marks a significant departure from previous generations at multiple levels. Unlike DDR4, DDR5 splits the memory bus into two independent 32-bit sub-channels per DIMM (each with its own command/address bus), effectively doubling the command bandwidth available to the memory controller and reducing latency bottlenecks in highly parallelised workloads. Each sub-channel operates independently, allowing for more granular memory access scheduling by the CPU's integrated memory controller.

The 256GB capacity of this module is achieved through the use of high-density DRAM die stacking and advanced packaging. Samsung employs its proprietary DRAM cell architecture to achieve exceptional density per die, which are then organised across the DIMM PCB to deliver the 256GB total capacity in a standard RDIMM form factor. The register buffer (RCD) on an RDIMM re-drives the command and address signals, allowing the memory controller to treat all DRAM devices on the module as a single logical load — critical for stability when populating all available DIMM slots in multi-socket server configurations.

DDR5 also introduces a PMIC (Power Management Integrated Circuit) directly on the DIMM itself, shifting voltage regulation responsibilities from the motherboard to the module. This improves power delivery precision to the DRAM components, reduces noise on the power rail, and allows for tighter voltage tolerance management — all contributing to improved signal integrity and operational stability at high frequencies.

Performance & Capacity

At 256GB per module, this Samsung DDR5 RDIMM enables extraordinary memory configurations in modern enterprise servers. A dual-socket server platform with 16 DIMM slots per socket can achieve up to 8TB of total system memory when fully populated — a capacity level that was previously only achievable through specialised memory expansion technologies. This opens the door to truly in-memory operation for datasets that previously required costly NVMe tiering or persistent memory solutions.

DDR5's baseline transfer rate of 4800 MT/s translates to a peak theoretical bandwidth of approximately 38.4 GB/s per channel, with dual-channel and quad-channel configurations multiplying effective bandwidth accordingly. For AI inference workloads loading large language models or recommendation system embeddings directly into DRAM, this bandwidth increase over DDR4 directly translates to reduced latency and higher query throughput. Similarly, for OLAP and real-time analytics platforms such as SAP HANA or Oracle TimesTen, the combination of higher capacity and bandwidth enables larger working sets to remain resident in memory, eliminating storage I/O as a performance bottleneck.

Compatibility & Integration

This Samsung DDR5 ECC RDIMM is designed for compatibility with server platforms based on Intel's 4th and 5th Generation Xeon Scalable processors (codenamed Sapphire Rapids and Emerald Rapids) and AMD EPYC 9004 Series processors (Genoa and Bergamo), all of which natively support DDR5 RDIMM technology. Compatible server platforms include current-generation systems from Dell (PowerEdge R760, R860, R960), HPE (ProLiant DL380 Gen11, DL560 Gen11), Lenovo (ThinkSystem SR650 V3, SR850 V3), Supermicro, and other major OEM server vendors supporting DDR5 RDIMM slots.

The module conforms to JEDEC DDR5 RDIMM standards, ensuring broad interoperability across compliant platforms. It supports standard DDR5 SPD (Serial Presence Detect) and EEPROM profiles, allowing automatic configuration by the server BIOS/UEFI without manual intervention. ECC functionality is supported natively by all DDR5 RDIMM-compatible server chipsets and processors, and does not require additional configuration beyond enabling ECC in the system BIOS.

Ideal Use Cases

  • Artificial Intelligence & Machine Learning Infrastructure: Large language model inference, transformer-based neural network training, and AI/ML pipeline acceleration benefit directly from ultra-high memory capacity and DDR5 bandwidth, reducing model load times and enabling larger batch processing.
  • High-Density Server Virtualisation: VMware vSphere, Microsoft Hyper-V, and KVM-based hypervisor platforms scale virtual machine density proportionally with available host memory. 256GB per DIMM enables hosting hundreds of concurrent VMs per server node without memory overcommitment pressure.
  • In-Memory Database Platforms: SAP HANA, Redis Enterprise, VoltDB, and similar in-memory DBMS platforms require terabyte-scale DRAM populations to retain full operational datasets in memory, eliminating I/O latency entirely from critical transaction paths.
  • Real-Time Analytics & OLAP: Business intelligence, financial risk modelling, and real-time OLAP engines process massive datasets faster when those datasets reside entirely in system memory, making 256GB RDIMMs a foundation for competitive analytics infrastructure.
  • HPC & Scientific Computing: Computational fluid dynamics, genomics processing, molecular simulation, and climate modelling workloads are memory-bandwidth-constrained. DDR5's improved bandwidth and capacity directly accelerates time-to-result for HPC cluster nodes.
  • Cloud Service Provider Infrastructure: Hyperscale and regional cloud providers building multi-tenant compute infrastructure benefit from maximum memory density per server to reduce per-VM memory cost and improve utilisation economics across large fleets.
  • ERP & Enterprise Application Hosting: Mission-critical ERP platforms such as SAP S/4HANA, Oracle E-Business Suite, and Microsoft Dynamics running on dedicated or converged infrastructure require large, reliable memory populations to sustain peak transaction throughput.

Why Buy from Omnixon

Omnixon Global operates from Dubai, UAE, positioning us as the strategic hardware procurement partner of choice for enterprise IT teams across the GCC region, including Saudi Arabia, the UAE, Qatar, Kuwait, Bahrain, Oman, and broader MENA markets. Our inventory is held locally, enabling rapid fulfilment for time-sensitive infrastructure projects, data centre expansions, and emergency hardware replacement scenarios. Our team of enterprise hardware specialists provides pre-sales technical consultation to ensure compatibility validation, configuration guidance, and platform-specific recommendations — ensuring that every memory module deployed performs exactly as expected within your specific server environment. We serve hyperscalers, financial institutions, government entities, telecoms operators, and system integrators who demand verified hardware quality, professional account management, and the logistical reliability that only a regionally embedded distributor can provide.

Related Products & Ecosystem

To build a complete, high-performance server memory solution, consider pairing this Samsung 256GB DDR5 RDIMM with complementary products available through Omnixon's enterprise portfolio. Compatible enterprise servers from Dell, HPE, Lenovo, and Supermicro provide the DDR5-capable platforms to host this module. Enterprise SSDs and NVMe storage systems complement high-memory server builds by providing the fast persistent storage tier needed for data that exceeds even terabyte-scale memory configurations. For AI and HPC workloads, NVIDIA GPU accelerators and high-bandwidth network adapters and NICs round out the compute node. Network switches with 100GbE and 400GbE connectivity ensure memory-bandwidth advantages are not bottlenecked at the fabric layer. Explore Omnixon's full range of enterprise CPUs, GPUs, storage systems, and networking hardware to source complete infrastructure solutions from a single trusted regional partner.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUM321RBGA0B40-CWK
Part NumberM321RBGA0B40-CWK
ConditionNew
Capacity256GB
Memory TypeDDR5
Module TypeRDIMM (Registered ECC)
Form Factor288-Pin DIMM
Speed4800 MT/s (DDR5-4800)
ECC SupportYes — On-Die ECC + System ECC
Operating Voltage1.1V
Data Width72-bit (64-bit + 8-bit ECC)
Rank2Rx4 (Dual Rank x4)
Processor CompatibilityIntel Xeon Scalable 4th/5th Gen (Sapphire Rapids, Emerald Rapids); AMD EPYC 9004 Series (Genoa, Bergamo)
StandardJEDEC DDR5 RDIMM

Frequently Asked Questions about Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK

What does the Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK do?

The Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK?

Key specifications for the Samsung 256GB DDR5 ECC RDIMM Server Memory M321RBGA0B40-CWK: new condition; part number M321RBGA0B40-CWK; condition New Pulled; brand Samsung; capacity 256GB; memory type DDR5; module type RDIMM (Registered ECC). Manufacturer part number M321RBGA0B40-CWK. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.