Micron HBM3E 12-High 36GB

Brand: Micron | Category: Memory (RAM)

SKU: MICR-MT62F3072S64A8DE | Part #: MT62F3072S64A8DE | MPN: MT62F3072S64A8DE

Contact for Pricing — Request a Quote

Request a Quote Contact Us

About the Micron HBM3E 12-High 36GB

The Micron HBM3E 12-High 36GB from Micron is enterprise-grade Memory (RAM) hardware built for data centers. Micron HBM3E 12-High 36GB delivers 1.2 TB/s of memory bandwidth in a single stack, purpose-built for next-generation AI accelerators and high-performance GPU compute. Available in brand new condition. Micron memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.

Technical Specifications

BrandMicron
CategoryMemory (RAM)
SKUMICR-MT62F3072S64A8DE
Part NumberMT62F3072S64A8DE
ConditionNew
Product FamilyHBM3E
Stack Configuration12-High
Capacity per Stack36 GB
Memory StandardJEDEC HBM3E
Interface Width1024-bit per stack
Peak Memory Bandwidth1.2 TB/s per stack
Data Rate9.2 Gbps per pin (approximate, per JEDEC HBM3E spec)
Pseudo-Channel Architecture16 pseudo-channels per stack
Through-Silicon Vias (TSVs)High-density TSV interconnect across 12 DRAM die layers
Die TechnologyMicron 1-gamma (1γ) DRAM process node
Error CorrectionOn-die ECC (ODECC) with advanced multi-bit correction
Operating Voltage (VDD)1.1 V
Power EfficiencyIndustry-leading pJ/bit, lower total package power than competing HBM3E implementations
Typical Stack Power~18–20 W per stack at full bandwidth (approximate)
Operating Temperature0°C to 85°C junction (HBM standard thermal specification)
Package Integration Method2.5D silicon interposer / CoWoS and advanced 3D heterogeneous integration
Stack Height (Physical)12 active DRAM dies + 1 base logic die
Microbump Pitch55 µm (JEDEC HBM3E compliant)
Reliability StandardAutomotive-grade and data center qualification per JEDEC JESD79-5B
Use Case TargetsAI accelerators, high-performance GPUs, HPC processors, custom ASIC AI silicon
Launch Generation2025 Q3