Brand: Samsung | Category: Memory (RAM)
SKU: SAMS-K4UAABFBMDNW05 | Part #: K4UAABFBMD-NW05 | MPN: K4UAABFBMD-NW05
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The Samsung HBM3E 36GB Cube from Samsung is enterprise-grade Memory (RAM) hardware built for data centers. Samsung's 36GB HBM3E Cube delivers over 1.2 TB/s of memory bandwidth to power next-generation AI accelerators and GPU-based training clusters. Available in brand new condition. Samsung memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAMS-K4UAABFBMDNW05 |
| Part Number | K4UAABFBMD-NW05 |
| Condition | New |
| Product Name | HBM3E 36GB Cube |
| Generation | HBM3E (4th Generation HBM) |
| Capacity per Stack | 36 GB |
| Die Configuration | 12-layer stacked DRAM dies + 1 base logic die |
| Process Node | Samsung 1c-nm DRAM |
| Interface Width | 1,024-bit per cube |
| Data Rate | Up to 9.8 Gbps per pin |
| Peak Bandwidth per Cube | >1.2 TB/s |
| Operating Voltage (VDD) | 1.05 V nominal |
| Error Correction | On-die ECC covering DRAM arrays and TSV interconnect fabric |
| Through-Silicon Via (TSV) Count | >50,000 TSVs per stack |
| Package Type | HBM3E Cube (interposer-mount, JEDEC compliant) |
| Compliance Standard | JEDEC HBM3E |
| Form Factor | Cube package for 2.5D/3D silicon interposer integration |
| Temperature Range (Operating) | 0°C to 95°C junction (accelerator profile) |
| Thermal Interface | Top-die heat spreader compatible with direct liquid cooling assemblies |
| Power Consumption (Typical) | Approx. 20–25 W per cube at full bandwidth utilization |
| Coplanarity Tolerance | ≤50 µm (enhanced for high-density multi-cube substrates) |
| Target Integration | GPU accelerators, custom AI ASICs, FPGA inference platforms via silicon interposer |
| Launch Quarter | Q1 2025 |
| Supported Memory Modes | Pseudo-channel mode, AiM-ready architecture |
The Samsung HBM3E 36GB Cube is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung HBM3E 36GB Cube: new condition; manufacturer Samsung; product name HBM3E 36GB Cube; generation HBM3E (4th Generation HBM); capacity per stack 36 GB; die configuration 12-layer stacked DRAM dies + 1 base logic die; process node Samsung 1c-nm DRAM. Manufacturer part number K4UAABFBMD-NW05. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.