Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM

Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM

Brand: Samsung | Category: Memory (RAM)

SKU: M321R4GA3PB0-CWM | Part #: M321R4GA3PB0-CWM

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About the Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM

Product Overview

The Samsung 32GB DDR5-5600 ECC RDIMM (Registered Dual Inline Memory Module) represents the forefront of enterprise server memory technology. Operating at a native speed of 5600 MT/s with a 288-pin DDR5 form factor, this module is purpose-built for mission-critical workloads that demand maximum memory bandwidth, ultra-low latency, and rock-solid data integrity. Supplied in New Pulled condition — meaning it has been carefully extracted from a production server system and has never been used in the field — this module retains full factory specifications while offering the practicality and value that enterprise procurement teams across the GCC and worldwide seek.

DDR5 represents a fundamental architectural leap over DDR4, doubling the burst length, increasing per-pin bandwidth, integrating on-die ECC (Error Correction Code) directly on the DRAM die, and shifting the power management circuitry onto the module itself via an onboard PMIC (Power Management IC). For enterprise operators building out or refreshing server fleets, these changes translate into measurable gains in throughput, thermal efficiency, and reliability — all critical factors when running virtualisation stacks, AI inference engines, in-memory databases, or large-scale analytics platforms.

Samsung, as the world's largest DRAM manufacturer, brings unmatched wafer-level quality control, yield consistency, and enterprise firmware maturity to this module. The M321R4GA3PB0-CWM is validated for deployment in leading server platforms and is a direct fit for operators standardising on DDR5 infrastructure across their UAE, Saudi Arabia, Qatar, Kuwait, Bahrain, Oman, and broader MENA data centre estates.

Key Features & Benefits

  • High-Speed DDR5-5600 Operation: Operates at 5600 MT/s (PC5-44800), delivering substantially higher peak bandwidth than DDR4-3200 predecessors — enabling faster data feeds to CPUs in compute-intensive and memory-bound workloads.
  • 32GB Per Module Capacity: A single DIMM slot delivers 32GB, allowing dense server memory configurations. A dual-socket server with 16 DIMM slots can reach 512GB of total RAM without complex multi-rank compromises.
  • On-Die ECC (ODECC): Every DDR5 DRAM die incorporates internal ECC logic that silently corrects single-bit errors at the silicon level before they are ever presented to the memory bus — an additional reliability layer on top of the module-level ECC.
  • Registered (Buffered) Design: The register component on the RDIMM re-drives command and address signals, reducing electrical load on the memory controller and enabling higher DIMM counts per channel for maximum system capacity.
  • Onboard PMIC: DDR5 moves voltage regulation onto the DIMM itself, delivering cleaner, tighter power delivery to the DRAM, improving signal integrity at high speeds and reducing motherboard-level power design complexity.
  • ECC at the Module Level: In addition to ODECC, standard SECDED (Single Error Correction, Double Error Detection) ECC is supported at the module level, meeting the RAS (Reliability, Availability, Serviceability) requirements of enterprise and hyperscale deployments.
  • Samsung Manufacturing Pedigree: Produced on Samsung's leading-edge DRAM fabrication process nodes, ensuring consistent die quality, tight voltage tolerances, and long operational life under continuous server workloads.
  • New Pulled Condition: These modules are sourced from new or near-new server systems and are functionally equivalent to retail-boxed units, making them ideal for cost-conscious enterprise buyers who require genuine OEM-grade quality.

Technical Architecture

DDR5 introduces a dual-channel architecture within a single DIMM. Each 64-bit DDR4 channel is split into two independent 32-bit sub-channels on DDR5, each with its own independent command/address bus and data bus. This architectural change increases memory access parallelism at the module level, reducing latency for random access patterns and improving bandwidth utilisation for streaming workloads.

The M321R4GA3PB0-CWM is built using Samsung's x4 DRAM die organisation. The module uses a 2Rx4 rank configuration (2 ranks, x4 die width), which provides the high capacity and bandwidth characteristics suited to demanding server environments. The registered clock driver (RCD) on the module interfaces with the memory controller via the DDR5 JEDEC-standardised command/address protocol, and the SPD (Serial Presence Detect) EEPROM contains full XMP/JEDEC timing tables for automatic configuration at server POST.

Operating voltage for DDR5 is nominally 1.1V (VDD/VDDQ), down from 1.2V on DDR4, with the PMIC accepting the standard 12V server rail and converting it locally. This reduces I/O switching noise and enables higher operating frequencies with improved thermal headroom. The module operates at a standard CAS latency of CL46, with tRCD and tRP timings optimised for the DDR5-5600 speed bin per JEDEC JESD79-5B specifications.

Performance & Capacity

At DDR5-5600 with a 64-bit data bus (per sub-channel pair), the theoretical peak bandwidth per DIMM reaches approximately 44.8 GB/s. In a dual-socket server with 8 DIMMs per socket and 2 DIMMs per memory channel (2DPC), aggregate system memory bandwidth can exceed 350 GB/s — a figure that has significant implications for memory-bandwidth-limited workloads such as HPC simulations, large language model (LLM) inference, genomics pipelines, and real-time streaming analytics.

For virtualisation density benchmarks, moving from DDR4-3200 to DDR5-5600 yields measurable improvements in VM consolidation ratios on platforms like VMware vSphere and Microsoft Hyper-V, where the memory subsystem is frequently the primary bottleneck. In-memory database platforms such as SAP HANA, Redis, and Apache Ignite benefit directly from the increased bandwidth and reduced access latency, enabling faster query response times and higher transaction throughput without additional software tuning.

The 32GB capacity per module strikes the optimal balance between density and cost for mainstream enterprise server configurations, supporting memory configurations from 64GB (2 DIMMs) up to 2TB+ in large 8-socket platforms, depending on the specific server model and its memory population rules.

Compatibility & Integration

The Samsung M321R4GA3PB0-CWM is designed for compatibility with server platforms based on the 4th and 5th generation Intel Xeon Scalable processors (Sapphire Rapids, Emerald Rapids) and AMD EPYC Genoa/Bergamo/Siena processors — all of which natively support DDR5 memory channels. It is suited for use in leading server brands including Dell PowerEdge (R760, R860, R960 series), HPE ProLiant (DL380 Gen11, DL560 Gen11), Lenovo ThinkSystem (SR650 V3, SR850 V3), Supermicro H13 series, and compatible Inspur and H3C platforms.

The module adheres to JEDEC JESD79-5B DDR5 standards and carries the following compatibility and compliance attributes:

  • JEDEC DDR5-5600 (PC5-44800) standard compliance
  • 288-pin DDR5 RDIMM form factor
  • ECC support per JEDEC and SMBIOS standards
  • SPD EEPROM with full JEDEC timing tables
  • Compatible with Linux (RHEL, Ubuntu, SUSE), Windows Server 2019/2022, VMware vSphere 8.x, and major hypervisor platforms
  • RoHS compliant manufacturing

Ideal Use Cases

  • AI & Machine Learning Inference: Large model inference engines require fast, high-capacity memory to load model weights and serve low-latency predictions. DDR5-5600 RDIMMs provide the bandwidth headroom to feed accelerators and CPUs efficiently.
  • In-Memory Databases & Analytics: SAP HANA, VoltDB, MemSQL, and similar platforms keep entire datasets in RAM. 32GB DDR5 modules allow operators to scale memory capacity without sacrificing per-channel bandwidth.
  • High-Density Virtualisation: VMware vSphere, Microsoft Hyper-V, and KVM environments benefit from both the higher capacity per DIMM and the improved memory bandwidth, supporting more VMs per host with better isolation and performance.
  • High-Performance Computing (HPC): Scientific simulations, computational fluid dynamics, financial risk modelling, and genomics sequencing pipelines are all heavily memory-bandwidth-bound and see direct performance gains from DDR5-5600.
  • Cloud-Native & Containerised Workloads: Kubernetes clusters and container runtimes running microservices architectures benefit from the combination of high capacity and fast random-access latency for ephemeral workload scheduling.
  • Enterprise Storage Caching: NVMe-oF and software-defined storage platforms use server DRAM as write buffers and read caches; higher bandwidth and capacity translate directly into higher cache hit rates and storage throughput.
  • Edge & Telco Infrastructure: 5G core network functions and edge compute nodes deployed in regional data centres across the GCC benefit from the lower power consumption and higher efficiency of DDR5 versus DDR4.

Why Buy from Omnixon

Omnixon Global operates from Dubai, UAE, positioning us as the preferred enterprise IT hardware distributor for clients across the GCC region — including Saudi Arabia, Qatar, Kuwait, Bahrain, Oman — as well as Africa, South Asia, and international markets. Our inventory of Samsung DDR5 server memory modules is held in local Dubai stock, enabling rapid fulfilment for urgent data centre upgrade and expansion projects. Our enterprise procurement team understands the complexities of large-scale memory refresh cycles, compatibility validation requirements, and multi-vendor server environments. We work directly with IT managers, procurement officers, and systems integrators to source the right memory configuration at the right quantity, backed by rigorous pre-dispatch inspection to verify module integrity and authenticity. When you source Samsung DDR5 RDIMMs through Omnixon, you benefit from a trusted regional partner with deep technical knowledge, transparent stock visibility, and a commitment to supporting enterprise infrastructure across the Middle East and beyond.

Related Products & Ecosystem

To build a complete, high-performance server memory solution, consider pairing this Samsung DDR5 RDIMM with complementary products available from Omnixon's broad inventory. Explore our range of enterprise servers from Dell, HPE, Lenovo, and Supermicro — all validated for DDR5 memory. Upgrade storage performance with enterprise NVMe SSDs and enterprise HDDs for tiered storage architectures. For networking, our portfolio of high-speed network adapters and NICs and network switches ensures your memory-rich servers are supported by a low-latency, high-bandwidth fabric. Protect your infrastructure investment with UPS and power protection solutions and house your systems in our range of server racks and enclosures. Our CPUs category includes the latest Intel Xeon and AMD EPYC processors that are the natural platform partners for DDR5-5600 memory modules.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUM321R4GA3PB0-CWM
Part NumberM321R4GA3PB0-CWM
ConditionNew
Capacity32GB
Memory TypeDDR5
Speed5600 MT/s (PC5-44800)
Form FactorRDIMM (Registered DIMM)
Pin Count288-pin
ECC SupportYes (ECC + On-Die ECC)
Rank Configuration2Rx4 (Dual Rank, x4)
CAS LatencyCL46
Operating Voltage1.1V (VDD/VDDQ)
StandardJEDEC JESD79-5B DDR5
RoHSCompliant

Frequently Asked Questions about Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM

What does the Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM do?

The Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM?

Key specifications for the Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM: new condition; part number M321R4GA3PB0-CWM; condition New Pulled; brand Samsung; capacity 32GB; memory type DDR5; speed 5600 MT/s (PC5-44800). Manufacturer part number M321R4GA3PB0-CWM. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.