Brand: Samsung | Category: Memory (RAM)
SKU: M321R4GA3PB0-CWM | Part #: M321R4GA3PB0-CWM
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The Samsung 32GB DDR5-5600 ECC RDIMM (Registered Dual Inline Memory Module) represents the forefront of enterprise server memory technology. Operating at a native speed of 5600 MT/s with a 288-pin DDR5 form factor, this module is purpose-built for mission-critical workloads that demand maximum memory bandwidth, ultra-low latency, and rock-solid data integrity. Supplied in New Pulled condition — meaning it has been carefully extracted from a production server system and has never been used in the field — this module retains full factory specifications while offering the practicality and value that enterprise procurement teams across the GCC and worldwide seek.
DDR5 represents a fundamental architectural leap over DDR4, doubling the burst length, increasing per-pin bandwidth, integrating on-die ECC (Error Correction Code) directly on the DRAM die, and shifting the power management circuitry onto the module itself via an onboard PMIC (Power Management IC). For enterprise operators building out or refreshing server fleets, these changes translate into measurable gains in throughput, thermal efficiency, and reliability — all critical factors when running virtualisation stacks, AI inference engines, in-memory databases, or large-scale analytics platforms.
Samsung, as the world's largest DRAM manufacturer, brings unmatched wafer-level quality control, yield consistency, and enterprise firmware maturity to this module. The M321R4GA3PB0-CWM is validated for deployment in leading server platforms and is a direct fit for operators standardising on DDR5 infrastructure across their UAE, Saudi Arabia, Qatar, Kuwait, Bahrain, Oman, and broader MENA data centre estates.
DDR5 introduces a dual-channel architecture within a single DIMM. Each 64-bit DDR4 channel is split into two independent 32-bit sub-channels on DDR5, each with its own independent command/address bus and data bus. This architectural change increases memory access parallelism at the module level, reducing latency for random access patterns and improving bandwidth utilisation for streaming workloads.
The M321R4GA3PB0-CWM is built using Samsung's x4 DRAM die organisation. The module uses a 2Rx4 rank configuration (2 ranks, x4 die width), which provides the high capacity and bandwidth characteristics suited to demanding server environments. The registered clock driver (RCD) on the module interfaces with the memory controller via the DDR5 JEDEC-standardised command/address protocol, and the SPD (Serial Presence Detect) EEPROM contains full XMP/JEDEC timing tables for automatic configuration at server POST.
Operating voltage for DDR5 is nominally 1.1V (VDD/VDDQ), down from 1.2V on DDR4, with the PMIC accepting the standard 12V server rail and converting it locally. This reduces I/O switching noise and enables higher operating frequencies with improved thermal headroom. The module operates at a standard CAS latency of CL46, with tRCD and tRP timings optimised for the DDR5-5600 speed bin per JEDEC JESD79-5B specifications.
At DDR5-5600 with a 64-bit data bus (per sub-channel pair), the theoretical peak bandwidth per DIMM reaches approximately 44.8 GB/s. In a dual-socket server with 8 DIMMs per socket and 2 DIMMs per memory channel (2DPC), aggregate system memory bandwidth can exceed 350 GB/s — a figure that has significant implications for memory-bandwidth-limited workloads such as HPC simulations, large language model (LLM) inference, genomics pipelines, and real-time streaming analytics.
For virtualisation density benchmarks, moving from DDR4-3200 to DDR5-5600 yields measurable improvements in VM consolidation ratios on platforms like VMware vSphere and Microsoft Hyper-V, where the memory subsystem is frequently the primary bottleneck. In-memory database platforms such as SAP HANA, Redis, and Apache Ignite benefit directly from the increased bandwidth and reduced access latency, enabling faster query response times and higher transaction throughput without additional software tuning.
The 32GB capacity per module strikes the optimal balance between density and cost for mainstream enterprise server configurations, supporting memory configurations from 64GB (2 DIMMs) up to 2TB+ in large 8-socket platforms, depending on the specific server model and its memory population rules.
The Samsung M321R4GA3PB0-CWM is designed for compatibility with server platforms based on the 4th and 5th generation Intel Xeon Scalable processors (Sapphire Rapids, Emerald Rapids) and AMD EPYC Genoa/Bergamo/Siena processors — all of which natively support DDR5 memory channels. It is suited for use in leading server brands including Dell PowerEdge (R760, R860, R960 series), HPE ProLiant (DL380 Gen11, DL560 Gen11), Lenovo ThinkSystem (SR650 V3, SR850 V3), Supermicro H13 series, and compatible Inspur and H3C platforms.
The module adheres to JEDEC JESD79-5B DDR5 standards and carries the following compatibility and compliance attributes:
Omnixon Global operates from Dubai, UAE, positioning us as the preferred enterprise IT hardware distributor for clients across the GCC region — including Saudi Arabia, Qatar, Kuwait, Bahrain, Oman — as well as Africa, South Asia, and international markets. Our inventory of Samsung DDR5 server memory modules is held in local Dubai stock, enabling rapid fulfilment for urgent data centre upgrade and expansion projects. Our enterprise procurement team understands the complexities of large-scale memory refresh cycles, compatibility validation requirements, and multi-vendor server environments. We work directly with IT managers, procurement officers, and systems integrators to source the right memory configuration at the right quantity, backed by rigorous pre-dispatch inspection to verify module integrity and authenticity. When you source Samsung DDR5 RDIMMs through Omnixon, you benefit from a trusted regional partner with deep technical knowledge, transparent stock visibility, and a commitment to supporting enterprise infrastructure across the Middle East and beyond.
To build a complete, high-performance server memory solution, consider pairing this Samsung DDR5 RDIMM with complementary products available from Omnixon's broad inventory. Explore our range of enterprise servers from Dell, HPE, Lenovo, and Supermicro — all validated for DDR5 memory. Upgrade storage performance with enterprise NVMe SSDs and enterprise HDDs for tiered storage architectures. For networking, our portfolio of high-speed network adapters and NICs and network switches ensures your memory-rich servers are supported by a low-latency, high-bandwidth fabric. Protect your infrastructure investment with UPS and power protection solutions and house your systems in our range of server racks and enclosures. Our CPUs category includes the latest Intel Xeon and AMD EPYC processors that are the natural platform partners for DDR5-5600 memory modules.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | M321R4GA3PB0-CWM |
| Part Number | M321R4GA3PB0-CWM |
| Condition | New |
| Capacity | 32GB |
| Memory Type | DDR5 |
| Speed | 5600 MT/s (PC5-44800) |
| Form Factor | RDIMM (Registered DIMM) |
| Pin Count | 288-pin |
| ECC Support | Yes (ECC + On-Die ECC) |
| Rank Configuration | 2Rx4 (Dual Rank, x4) |
| CAS Latency | CL46 |
| Operating Voltage | 1.1V (VDD/VDDQ) |
| Standard | JEDEC JESD79-5B DDR5 |
| RoHS | Compliant |
The Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung 32GB DDR5-5600 ECC RDIMM Server Memory M321R4GA3PB0-CWM: new condition; part number M321R4GA3PB0-CWM; condition New Pulled; brand Samsung; capacity 32GB; memory type DDR5; speed 5600 MT/s (PC5-44800). Manufacturer part number M321R4GA3PB0-CWM. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.