Samsung 16GB DDR5-6400 ECC RDIMM Server Memory M321R2GA3PB2-CCP

Brand: Samsung | Category: Memory (RAM)

SKU: M321R2GA3PB2-CCP | Part #: M321R2GA3PB2-CCP

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Product Overview

The Samsung 16GB DDR5-6400 ECC Registered DIMM (RDIMM) represents the cutting edge of server memory technology, engineered specifically for enterprise-grade compute platforms that demand maximum bandwidth, reliability, and density. Operating at 6400 MT/s — among the highest speeds available in the DDR5 generation — this module significantly outpaces its DDR4 predecessors, delivering nearly twice the theoretical peak bandwidth per channel. Designed for deployment in mission-critical environments such as hyperscale data centres, AI/ML inference clusters, and high-frequency transaction processing systems, this Samsung RDIMM is the memory substrate that next-generation workloads depend on.

Samsung is the world's largest DRAM manufacturer and a pioneer in DDR5 technology, producing memory that meets the most stringent quality, performance, and reliability standards in the industry. The M321R2GA3PB2-CCP is a New Pulled unit — removed from factory-sealed or brand-new systems — ensuring full functionality and authentic Samsung specifications without compromise. For enterprise IT teams, procurement specialists, and system integrators across the GCC and globally, this module offers a strategic path to upgrading server infrastructure to DDR5 performance levels.

Key Features & Benefits

• DDR5-6400 Speed: Operates at 6400 MT/s, providing exceptional memory bandwidth that accelerates data-intensive applications including AI inferencing, in-memory databases, and real-time analytics pipelines.
• 16GB Capacity per Module: Offers a practical per-DIMM density for high-channel-count platforms, enabling balanced memory population across modern multi-channel server architectures without bottlenecking compute resources.
• ECC (Error-Correcting Code): On-die and module-level ECC detects and corrects single-bit memory errors in real time, protecting workload integrity and reducing unplanned downtime in production environments.
• Registered (Buffered) Architecture: The RDIMM register offloads electrical load from the memory controller, supporting higher DIMM counts per channel and improving signal integrity at extreme speeds — critical for large-memory server configurations.
• Samsung Genuine DRAM Dies: Built with Samsung's own vertically integrated DRAM fab process, ensuring consistent die quality, tighter binning tolerances, and superior long-term endurance compared to third-party module assemblers.
• On-Die Termination (ODT) and Decision Feedback Equalization (DFE): DDR5-native signal integrity features embedded in the DRAM die itself, enabling reliable operation at 6400 MT/s across the full operating temperature range.
• Reduced Voltage Operation: DDR5 operates at 1.1V compared to DDR4's 1.2V, contributing to lower per-module power draw and reduced thermal load per rack — directly impacting PUE and cooling costs in high-density deployments.
• New Pulled Condition: Sourced from new or factory-fresh systems, ensuring the module has not been subject to wear, thermal cycling, or field degradation typical of refurbished or used components.

Technical Architecture

The Samsung M321R2GA3PB2-CCP is built on Samsung's advanced DDR5 DRAM die technology, leveraging the company's proprietary EUV (Extreme Ultraviolet) lithography processes to achieve high bit density and power efficiency within a standard 288-pin DIMM form factor. Unlike DDR4 modules that rely on a single 64-bit wide bus per channel, DDR5 introduces a dual 32-bit sub-channel architecture per DIMM slot. This architectural change doubles the burst access granularity, significantly improving bandwidth efficiency for workloads with mixed access patterns.

Each DDR5 RDIMM integrates a Registering Clock Driver (RCD) — now standardised under JEDEC SPD Hub specifications — that buffers command, address, and clock signals between the memory controller and DRAM devices. This buffering is what enables Registered DIMMs to scale to higher DIMM counts per channel without signal degradation, a critical property for server platforms that may populate 8 or more DIMMs per CPU socket. The module also features an integrated SPD (Serial Presence Detect) hub with temperature sensor (TSOD), enabling the host system's BMC to monitor thermal conditions in real time.

The CCP speed bin designation indicates this module is rated and validated at 6400 MT/s with specific CAS latency and timing parameters that comply with JEDEC DDR5 standards. Samsung's binning process ensures that only dies meeting the 6400 MT/s electrical threshold are assembled into this SKU, providing headroom for platforms operating at rated speeds over extended operational periods.

Performance & Capacity

At DDR5-6400, a single DIMM provides a theoretical peak bandwidth of approximately 51.2 GB/s per channel. In a dual-channel configuration — standard on modern server sockets — this translates to over 100 GB/s of memory bandwidth per CPU, a figure that has profound implications for AI inference latency, HPC matrix operations, and database query throughput. Compared to DDR4-3200 (the previous performance ceiling for mainstream server memory), DDR5-6400 delivers a 2x bandwidth improvement per channel.

For a fully populated 8-channel Intel Xeon Scalable (Sapphire Rapids or Granite Rapids) server with two sockets and 16 DIMMs of this module, the total installed memory capacity reaches 256GB with an aggregate theoretical bandwidth exceeding 800 GB/s. This level of memory subsystem performance is sufficient to feed multiple high-core-count CPUs at full utilisation during vectorised compute operations, large language model (LLM) token processing, or columnar analytics scans across multi-hundred-gigabyte datasets.

Latency improvements in DDR5 over DDR4 are more nuanced: while absolute CAS latency in nanoseconds is comparable or marginally higher at equivalent clock speeds, the higher operating frequency and sub-channel architecture ensure that sustained bandwidth-bound workloads see substantial throughput gains. Real-world benchmark results on SPECmemory and STREAM Triad consistently demonstrate 30–50% throughput improvements when migrating from DDR4-3200 to DDR5-6400 platforms.

Compatibility & Integration

The Samsung M321R2GA3PB2-CCP is designed for server platforms with DDR5 RDIMM support, primarily targeting:

• Intel Xeon Scalable 4th Generation (Sapphire Rapids) and 5th Generation (Emerald Rapids): Full native DDR5 RDIMM support with up to 8 channels per socket and up to 3 DIMMs per channel on validated configurations.
• Intel Xeon 6 (Granite Rapids): Latest-generation Xeon platform with expanded DDR5 memory bandwidth support and enhanced RAS (Reliability, Availability, Serviceability) features.
• AMD EPYC 4th Generation (Genoa, Bergamo): Supports DDR5 RDIMM across 12 memory channels per socket, providing exceptionally high aggregate bandwidth for HPC and cloud-native workloads.
• JEDEC DDR5 Standard Compliance: Fully compliant with JEDEC JESD79-5 DDR5 specifications, ensuring broad interoperability across server OEM platforms including Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro, and others with DDR5 RDIMM slots.
• Operating Temperature Range: Standard commercial temperature range (0°C to 85°C DRAM junction), suitable for data centre environments with adequate airflow management.

Ideal Use Cases

• AI & Machine Learning Inference: Serving LLM inference requests and neural network forward passes requires enormous memory bandwidth. DDR5-6400 RDIMMs ensure the CPU memory subsystem is not the bottleneck when feeding accelerators or handling CPU-bound inference workloads.
• In-Memory Databases & OLAP: Platforms such as SAP HANA, Redis, Apache Ignite, and ClickHouse benefit directly from both high capacity and high bandwidth. DDR5-6400 accelerates columnar scan rates and reduces query latency on large datasets that fit entirely in system memory.
• Virtualisation & Cloud Platforms: VMware vSphere, Microsoft Hyper-V, KVM, and OpenStack hypervisors that run dense VM workloads require high memory bandwidth to service multiple concurrent guest OS memory requests. Higher-frequency RDIMMs reduce memory access queuing and improve VM density economics.
• High-Performance Computing (HPC): Scientific simulation, computational fluid dynamics, molecular dynamics, and financial modelling applications that are memory-bandwidth-bound see direct performance scaling with DDR5-6400 versus legacy DDR4 configurations.
• Real-Time Analytics & Streaming: Kafka brokers, Flink stream processors, and time-series databases (InfluxDB, TimescaleDB) performing real-time ingestion and query operations benefit from low-latency, high-bandwidth memory to manage large working set sizes.
• EDA & Engineering Workstations: Electronic Design Automation tools running large IC simulation netlists and PCB verification workloads consume massive amounts of memory bandwidth; DDR5-6400 RDIMMs reduce simulation wall-clock time significantly.

Why Buy from Omnixon

Omnixon Global is a trusted B2B IT hardware distributor headquartered in Dubai, UAE, purpose-built to serve enterprise procurement teams, system integrators, and data centre operators across the GCC region and internationally. We maintain physical inventory of high-demand server components — including Samsung DDR5 memory modules — in our Dubai-based warehouse, enabling rapid fulfilment for clients in Saudi Arabia, Qatar, Kuwait, Bahrain, Oman, and the broader Middle East, Africa, and South Asia corridors. Our procurement specialists understand the urgency of data centre expansion and refresh cycles; every order is handled with enterprise-grade attention to authenticity verification, accurate condition grading, and proper anti-static packaging to ensure modules arrive in full operational condition. We work exclusively with verifiable supply chains and can provide documentation supporting the New Pulled condition classification of this module. Whether you are scaling a hyperscale cluster, refreshing aging server infrastructure, or sourcing memory for a greenfield AI deployment, Omnixon provides the component availability, regional expertise, and technical competency that enterprise IT teams rely on.

Related Products & Ecosystem

To build a complete, high-performance DDR5 server environment, consider pairing this Samsung RDIMM with complementary products available from Omnixon's catalogue. CPUs — Intel Xeon Scalable 4th/5th Gen or AMD EPYC Genoa processors — are the natural platform partners for DDR5 memory. Enterprise SSDs using NVMe PCIe Gen5 interfaces complement the memory subsystem for storage-intensive workloads, preventing I/O bottlenecks in data pipeline architectures. GPUs from NVIDIA for AI/ML acceleration work alongside high-bandwidth system memory to maximise model throughput. Network Adapters & NICs at 25GbE, 100GbE, or 400GbE are essential to match the data ingestion rates that DDR5-equipped servers can sustain. Server Racks & Enclosures and Rack PDUs complete the physical infrastructure layer, while UPS & Power Protection units safeguard against power events that could corrupt in-memory workloads.