Brand: Samsung | Category: Memory (RAM)
SKU: M321RAGA0B40-CWM | Part #: M321RAGA0B40-CWM | MPN: M321RAGA0B40-CWM
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The Samsung 128GB DDR5-5600 RDIMM 4Rx4 ECC from Samsung is enterprise-grade Memory (RAM) hardware built for data centers. The Samsung 128GB DDR5-5600 RDIMM (M321RAGA0B40-CWM) is a high-density registered dual in-line memory module engineered for the demands of modern enterprise server platforms. Built on Samsung's advanced DDR5 architecture, this module operates at a rated speed of 5600 MT/s with a quad-rank, 4Rx4 configuration across a 288-pin interface, delivering the raw memory capacity required to support large in-memory datasets. On-die ECC (ODECC) is supplemented by the module-level ECC th Available in brand new condition. Samsung memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | M321RAGA0B40-CWM |
| Part Number | M321RAGA0B40-CWM |
| Condition | New |
| Manufacturer Part Number | M321RAGA0B40-CWM |
| Module Type | RDIMM (Registered DIMM) |
| Capacity | 128GB |
| DDR Generation | DDR5 |
| Speed Rating | DDR5-5600 (5600 MT/s) |
| Pin Configuration | 288-pin |
| Rank Configuration | 4Rx4 (Quad Rank, x4 organization) |
| ECC | ECC (Error-Correcting Code) |
| On-Die ECC | Yes (ODECC) |
| Operating Voltage | 1.1V |
| Form Factor | 288-pin RDIMM |
| DRAM Die Manufacturer | Samsung |
| Generation / Launch | 2024 Q1 |
| Compatible Architectures | Intel Xeon Scalable (DDR5 platforms), AMD EPYC (DDR5 platforms) |