Micron HBM3E 36GB 8-High Stack

Brand: Micron | Category: Memory (RAM)

SKU: MICR-MT62F3G32D8DV026 | Part #: MT62F3G32D8DV-026 | MPN: MT62F3G32D8DV-026

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About the Micron HBM3E 36GB 8-High Stack

The Micron HBM3E 36GB 8-High Stack from Micron is enterprise-grade Memory (RAM) hardware built for data centers. The Micron HBM3E 36GB 8-High Stack (MT62F3G32D8DV-026) represents Micron's third-generation High Bandwidth Memory implementation, built on the HBM3E JEDEC standard and manufactured using Micron's advanced 1β (1-beta) DRAM process node. The 8-Hi stacked architecture integrates nine dies — one base logic die plus eight DRAM dies — interconnected through thousands of through-silicon vias (TSVs), delivering extreme memory bandwidth and capacity in a compact 2.5D integration footp Available in brand new condition. Micron memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.

Technical Specifications

BrandMicron
CategoryMemory (RAM)
SKUMICR-MT62F3G32D8DV026
Part NumberMT62F3G32D8DV-026
ConditionNew
Manufacturer Part NumberMT62F3G32D8DV-026
Memory StandardHBM3E (JEDEC JESD238)
Capacity per Stack36 GB
Stack Height8-Hi (8 DRAM dies + 1 base logic die)
Interface Width1024-bit per stack
Data Rate (per pin)9.6 Gbps
Peak Memory Bandwidth (per stack)1.2 TB/s
DRAM Process NodeMicron 1β (1-beta)
Interconnect TechnologyThrough-Silicon Via (TSV) with microbump bonding
Packaging / Integration Method2.5D interposer (HBM stack placed on silicon interposer alongside GPU die)
ECC SupportOn-die ECC (ODECC) per JEDEC HBM3E specification
Primary ApplicationNVIDIA H200 Tensor Core GPU
Form FactorHBM stack (non-user-replaceable; substrate-integrated)