Brand: Micron | Category: Memory (RAM)
SKU: MICR-MTC80F216SB1RC56BB | Part #: MTC80F216SB1RC56BB | MPN: MTC80F216SB1RC56BB
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The Micron 256GB DDR5-5600 ECC RDIMM (3DS) from Micron is enterprise-grade Memory (RAM) hardware built for data centers. The Micron 256GB DDR5-5600 ECC RDIMM (3DS), part number MTC80F216SB1RC56BB, is a three-dimensional stacked registered dual in-line memory module engineered to deliver extreme capacity within a single DIMM slot. Built on Micron's 3DS (Three-Dimensional Stacking) architecture, the module stacks multiple DRAM dies vertically and connects them through a logic die, allowing 256GB of addressable memory while maintaining the physical and electrical footprint of a standard RDIMM. Ope Available in brand new condition. Micron memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | Micron |
| Category | Memory (RAM) |
| SKU | MICR-MTC80F216SB1RC56BB |
| Part Number | MTC80F216SB1RC56BB |
| Condition | New |
| Manufacturer Part Number | MTC80F216SB1RC56BB |
| Capacity | 256GB |
| Module Type | RDIMM (Registered DIMM) — 3DS (Three-Dimensional Stacked) |
| DDR Generation | DDR5 |
| Speed Grade | DDR5-5600 (5600 MT/s) |
| Pin Count | 288-pin |
| Form Factor | DIMM (288-pin DDR5 standard) |
| ECC | Yes — on-die ECC (oDEC) plus module-level ECC |
| Rank Configuration | 4Rx4 (Quad-rank, x4 device width) |
| Die Stacking | 3DS — 4H stacked DRAM die configuration |
| Voltage | 1.1V |
| CAS Latency | CL46 |
| Primary Timings | 46-45-45 |
| Operating Temperature | 0°C to 85°C (standard operating range) |
| RoHS Compliance | RoHS compliant |
| Compatible Architectures | Intel Xeon Scalable (Sapphire Rapids and later), AMD EPYC (Genoa and later) with DDR5 3DS RDIMM support |
| Data Width | 64-bit data bus + 8-bit ECC (72-bit total) |